Journal of Information Display

The Korean Infomation Display Society (한국정보디스플레이학회)
권호 표지

Improved Surface Morphologies of Printed Carbon Nanotubes by Heat Treatment and Their Field Emission Properties

  • Lee, Hyeon-Jae (Display and Nanosystem Lab., College of Engineering, Korea University) ;
  • Lee, Yang-Doo (Display and Nanosystem Lab., College of Engineering, Korea University) ;
  • Cho, Woo-Sung (Display and Nanosystem Lab., College of Engineering, Korea University) ;
  • Kim, Jai-Kyeong (Korea Institute of Science and Technology) ;
  • Lee, Yun-Hi (Department of Physics, Korea University) ;
  • Hwang, Sung-Woo (School of Electrical Engineering, Korea University) ;
  • Ju, Byeong-Kwon (Display and Nanosystem Lab., College of Engineering, Korea University)
  • Published : 2006.06.24
Download PDF
⟨ Previous Next ⟩

Abstract

This paper presents heating process for obtaining standing carbon nanotube emitters to improve field-emission properties from the screen-printed multiwalled carbon nanotube (MWCNT) films. In an atmosphere with optimum combination of nitrogen and air for heat treatment of CNT films, the CNT emitters can be made to protrude from the surface. This allows for high emission current and the formation of very uniform emission sites without special surface treatment. The morphological change of the CNT film by this technique has eliminated additional processing steps, such as surface treatment which may result in secondary contamination and damage to the film. Despite its simplicity the process provides high reproducibility in emission current density which makes the films suitable for practical applications.

Keywords

References

  1. W. B. Choi, D. S. Chung, J. H. Kang, H. Y. Kim, Y. W. Jin, I. T. Han, Y. H. Lee, J. E. Jung, N.S. Lee, G S. Park, and J. M. Kim, Appl. Phys. Lett., 75, 3129 (1999) https://doi.org/10.1063/1.125253
  2. Y. Kanazawa, T. Oyama, K. Murakami, and M. Takai, J. Vac. Sci. Technol. B, 22, 1342 (2004) https://doi.org/10.1116/1.1667518
  3. T. J. Vink, M. Gillies, J. C. Kriege and H. W. J. J. van de Laar, Appl. Phys. Lett., 83, 3552 (2003) https://doi.org/10.1063/1.1622789
  4. Y. C. Kim, K. H. Sohn, Y. M. Cho, and Eun H. Yori, Appl. Phys. Lett., 84, 5350 (2004) https://doi.org/10.1063/1.1766403
  5. A. Sawada, M. Iriguchi, W. J. Zhao, C. Ochiai, and M. Takai, J. Vac. Sci. Technol. B, 21, 362 (2003) https://doi.org/10.1116/1.1527597
  6. W. J. Zhao, A Sawada, and M. Takai, Jpn. J. Appl. Phys. Part 1, 41, 4314 (2002) https://doi.org/10.1143/JJAP.41.4314
  7. W. J. Zhao, N. Kawakami, A. Sawada, and M. Takai, J.Vac. Sci. Technol. B, 21, 1734 (2003) https://doi.org/10.1116/1.1587136
  8. M. Takai, W.J. Zhao, Sawada A., A. Hosono, S. Okuda, SID2003 Baltimore (Maryland. USA), Tech. Dig., 794 (2003)
  9. W. Rochanachirapar, K. Murakami, N. Yamasaki, S. Abo, F. Wakaya, M. Takai, A Hosono, and S. Okuda, J. Vac. Sci. Technol. B, 23, 765 (2005) https://doi.org/10.1116/1.1884118
  10. D.H. Kim, C.D. Kim and H.R. Lee, Carbon, 42, 1807 (2004) https://doi.org/10.1016/j.carbon.2004.03.015
  11. J.H. Park, J.H. Choi, J.S. Moon, D.G Kushinov, J.B. Yoo, C.Y. Park, J.W. Nam, C. K. Lee, J.H. Park and D.H Choe, Carbon, 43, 698(2005) https://doi.org/10.1016/j.carbon.2004.10.036
  12. J.H. Choi, A.R. Zoulkameev, Y.w. Jin, Y.J. Park, D.S. Chung, B.K. Song, H.W. Lee, S.H. Park, H.S. Kang, H.J. Kim, J.W. Kim, J.E. Jung and J.M. Kim, Appl. Phys. Lett. 84, 1022(2004) https://doi.org/10.1063/1.1645315
  13. D.S. Chung, S.H. Park, H.W. Lee, J.H. Choi, S.N. Cha, J.W. Kim, J.E. Jang, K.W. Min, S.H. Cho, M.J. Yoon, J.S. Lee, C.K. Lee, J.R. Yoo, J.M. Kim, J.E. Jung, Y.W. Jin, Y.J. Park, and J.B. You, Appl. Phys. Lett., 80, 4045(2002) https://doi.org/10.1063/1.1480104
  14. Y.W. Jin, J.E. Jung, Y.J. Park, J.H. Choi, D.S. Jung, H.W. Lee, S.H. Park, N.S. Lee, J.M. Kim, T.Y. Ko, S.J. Lee, S.Y. Hwang, J.H. You, J.B. Yoo and C.Y. Park, J. Appl. Phys., 92, 1065(2002) https://doi.org/10.1063/1.1489067
  15. J.H. Park, G.H. Son, J.S. Moon, J.H. Han, A.S. Berdinsky, D.G. Kuvshinov, J.B. Yoo, C.Y. Park, J.W. Nam, J. Park, C.G Lee, and D.H. Choe, J. Vac. Sci. Technol. B, 23, 749(2005) https://doi.org/10.1116/1.1851535