Optical Characteristic of InAs Quantum Dots in an InGaAs/GaAs Well Structure

광학적 방법으로 측정된 양자우물 안의 InAs 양자점의 에너지 준위

  • Nam H.D. (Nano Device Research Center, Korea Institute of Science and Technology) ;
  • Kwack H.S. (Department of Physics, Chungbuk National University) ;
  • Doynnette L. (Institut d'Electronique Fondamentale, Universite Paris-Sud) ;
  • Song J.D. (Nano Device Research Center, Korea Institute of Science and Technology) ;
  • Choi W.J. (Nano Device Research Center, Korea Institute of Science and Technology) ;
  • Cho W.J. (Nano Device Research Center, Korea Institute of Science and Technology) ;
  • Lee J.I. (Nano Device Research Center, Korea Institute of Science and Technology) ;
  • Cho Y.H. (Department of Physics, Chungbuk National University) ;
  • Julien F.H. (Institut d'Electronique Fondamentale, Universite Paris-Sud) ;
  • Choe J.W. (Department of Physics, Kyung Hee University) ;
  • Yang H.S. (Department of Physics, Chung-Ang University)
  • 남형도 (한국과학기술연구원 나노소자 연구센터) ;
  • 곽호상 (충북대학교 물리학과) ;
  • ;
  • 송진동 (한국과학기술연구원 나노소자 연구센터) ;
  • 최원준 (한국과학기술연구원 나노소자 연구센터) ;
  • 조운조 (한국과학기술연구원 나노소자 연구센터) ;
  • 이정일 (한국과학기술연구원 나노소자 연구센터) ;
  • 조용훈 (충북대학교 물리학과) ;
  • ;
  • 최정우 (경희대학교 물리학과) ;
  • 양해석 (중앙대학교 물리학과)
  • Published : 2006.03.01

Abstract

We investigated the optical property and the electronic subband structure of InAs quantum dots in an InAsGa/GaAs well structure utilizing photoluminescence (PL), PL excitation (PLE) and near infrared transmission spectroscopy. From transmission and PLE spectra, we found three bound states in the InAs quantum dot and two bound states in InGaAs/GaAs quantum well, and correlated to the results of intersubband transitions observed in photocurrent spectrum.

PL (photoluminescence), PLE (PL excitation) 그리고 근 적외선 투과 분광법을 활용하여 InAsGa/GaAs 우물 내 InAs 양자점 구조의 광학적 특성과 전자 버금 띠 구조에 대하여 연구하였다. 투과 스펙트럼과 PLE 스펙트럼으로부터 InAs 양자점 내 세 개의 구속 상태와 InGaAs/GaAs 우물 내에 두 개의 구속 상태가 존재함을 발견하였고, 광전류 스펙트럼에서 관측된 버금 띠 사이 전이들과 연관지어 해석하였다.

Keywords

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