마이크로전자및패키징학회지 (Journal of the Microelectronics and Packaging Society)
- 제13권4호
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- Pages.51-56
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- 2006
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- 1226-9360(pISSN)
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- 2287-7525(eISSN)
ITO/Glass 기판위에 PFO-poss 유기 발광층을 가지는 고분자 발광다이오드의 제작
Preparation of Polymer Light Emitting Diodes with PFO-poss Organic Emission Layer on ITO/Glass Substrates
- Yoo, Jae-Hyouk (Department of Electronics Engineering, Dankook University) ;
- Chang, Ho-Jung (Department of Electronics Engineering, Dankook University)
- 발행 : 2006.12.30
초록
ITO(Indium tin oxide)glass 기판 위에 PEDOT:PSS[poly(3,4-ethylenedioxythiophene):poly (styrene sulfonate)]와 PVX[poly(N-vinyl carbazole)] 고분자 물질을 정공 주입 및 수송층으로, 발광층으로 PFO-poss[Poly(9,9-dioctylfluorenyl-2,7-diyl) end capped with poss]를 사용하여 ITO/PEDOT:PSS/PVK/PFO-poss/LiF/Al 구조의 고분자 발광다이오드를 제작하였다. 이때 스핀코팅을 위한 발광 유기재료의 농도와 열처리 온도가 소자의 전기적, 광학적 특성에 미치는 영향을 조사하였다. 동일한 PFO-poss 농도에서 열처리 온도가
Polymer light emitting diodes (PLEDs) with ITO/EDOT:PSS/PVK/PFO-poss/LiF/Al structures were prepared by the spin coating method on ITO(indium tin oxide)/glass substrates. PFO-poss[Poly(9,9-dioctylfluorenyl-2,7-diyl) end capped with poss] was used as light emitting polymer. PVK[poly(N-vinyl carbazole)] and PEDOT:PSS [poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)] polymers were used as the hole injection and transport materials. The effect of PFO-poss concentration and the heating temperatures on the electrical and optical properties of the devices were investigated. At the same concentration of PFO-poss solution, the current density and luminance of PLED device tend to increase as the annealing temperature increase from