Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Microstructure and Properties of ITO and ITO/Ag/ITO Multilayer Thin Films Prepared by D.C. Magnetron Sputtering

D.C. 마그네트론 스퍼터링법으로 제조한 ITO 및 ITO/Ag/ITO 박막의 미세조직과 투명 전극 특성

  • Choi, Yong-Lak (Department of Materials Engineering, Soonchunhyang University) ;
  • Kim, Seon-Hwa (Department of Materials Engineering, Soonchunhyang University)
  • 최용락 (순천향대학교 신소재공학과) ;
  • 김선화 (순천향대학교 신소재공학과)
  • Published : 2006.08.27
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Abstract

ITO monolayer and ITO/Ag/ITO multilayer thin films are prepared by D.C. magnetron sputtering method. Ag layer was inserted for applying ITO to a flexible substrate at low temperature. Carrier concentration and carrier mobility of ITO and ITO/Ag/ITO thin films were measured, the transmittance of them also was done. The amorphous phase was confirmed to be combined in addition to (400) and (440) peaks from XRD result of ITO thin film. As the substrate temperature increased, the preferred orientation of (400) appeared. From the result of application of Ag layer at room temperature, the growth of columnar structure was inhibited, and the amorphous phase formed mostly. The ITO/Ag/ITO thin film represented the transmittance of above 80% when the thickness of Ag layer was 50 ${\AA}$, and the concentration of carrier increased up to above 10 times than that of ITO thin film. Finally, since very low resistance of 3.9${\Omega}/{\square}$ was observed, the effective application of low temperature process is expected to be possible for ITO thin film.

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