Wet-Etching Characteristics of Inorganic GeSbTe Films for High Density Optical Data Storage

고밀도 광기록을 위한 GeSbTe 박막의 Wet-Etching 특성연구

We are developing a phase change etching technology using an inorganic photoresist of GeSbTe film which is the recording material of the phase change disc. A selective etching phenomenon between amorphous and crystalline states can be utilized with an alkaline etchant. Phase-change pits could be formed using this technique, in which the etching selectivity is strongly dependent on the concentration of the etchant. The degree of etching was investigated by the transmittance between crystalline and amorphous films after the wet-etching. The pits patterned on the disc could be observed by AFM after wet-etching.