한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제19권12호
  • /
  • Pages.1078-1084
  • /
  • 2006
  • /
  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지
DOI QR코드

DOI QR Code

플라즈마 식각에 의하여 실리콘 표면에 유기된 불순물 오염의 분석 및 제거

Analysis and Reduction of Impurity Contamination Induced by Plasma Etching on Si Surface

  • 조선희 (한국과학기술원 신소재공학과) ;
  • 이원종 (한국과학기술원 신소재공학과)
  • 발행 : 2006.12.01
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

Impurity contamination induced by $CF_4\;and\;HBr/Cl_2/O_2$ plasma etching on Si surface was examined by using surface spectroscopes. XPS(x-ray photoelectron spectroscopy) surface analysis showed that F of 0.4 at % exists in the surface layer in the form of Si-F bonding but Br and Cl are below the detection limit $(0.1{\sim}1.0%)$ of the spectroscope. Static-SIMS(secondary ion mass spectrometry) surface analysis showed that the etched Si surface was contaminated with etching gas elements such as H, F, Cl and Br, and they existed to the depth of about $20{\sim}40nm$. The etched Si surface was treated with three different methods that were HF dip, thermal oxidation followed by HF dip and oxygen-plasma oxidation followed by HF dip. They showed an effect in reducing the impurity contamination and the oxygen-plasma oxidation followed by HF dipping method appears to be a little bit more effective.

키워드

참고문헌

  1. G. Oehrlein, 'Dry etching damage of silicon: a review', Mater. Sci. Eng. B, Vol. 4, No. 1-4, p. 441, 1989 https://doi.org/10.1016/0921-5107(89)90207-9
  2. F. Moghadam and X. C. Mu, 'A study of contamination and damage on Si surfaces induced by dry etching', IEEE trans. Electron. Devices, Vol. 36, No. 9, p. 1602, 1989
  3. H. S. Kim, W. J. Lee, W. J. Lee, G. Y. Yeom, J. H. Kim, and K. W. Whang, 'Etch-induced physical damage and contamination during highly selective oxide etching using $C_4F_8/H_2$ helicon wave plasmas', J. Electrochem. Soc., Vol. 146, No.4, p. 1517, 1999 https://doi.org/10.1149/1.1391797
  4. O. Kwon and H. H. Sawin, 'Postsilicon oxide etch cleaning process using integrated ashing and an HF vapor process' , J. Electrochem. Soc., Vol. 153, No.6, p. G515, 2006 https://doi.org/10.1149/1.2186769
  5. X. Mu, S. J. Fonash, G. S. Oehrlein, S. N. Chakravarti, C. Parks, and J. Keller, 'A study of $CClF_3/H_2$ reactive ion etching damage and contamination effects in silicon', J. Appl. Phys., Vol. 59, No.8, p. 2958, 1986 https://doi.org/10.1063/1.336378
  6. H. Nishino, N. Hayasaka, K. Horioka, J Shiozawa, S. Nadahara, N. Shooda, Y. Akama, A. Sakai, and H. Okano, 'Smoothing of the Si surface using $CF_4/O_2$ down-flow etching', J. Appl. Phys., Vol. 74, No.2, p. 1349, 1993 https://doi.org/10.1063/1.354891
  7. S. M. Koo, S. K. Lee, C. M. Zetterling, and M. Ostling, 'Electrical characteristics of metaloxide-semiconductor capacitors on plasma etch-damaged silicon carbide', Solid-State Electronics, Vol. 46, No. 9, p. 1375, 2002 https://doi.org/10.1016/S0038-1101(02)00068-0
  8. X. Cao and R. J. Hamers, 'Formation of a surface-mediated donor - acceptor complex : coadsorption of trimetylamine and boron trifluoride on the silicon (001) surface', J. Phys, Chem. B, Vol. 106, No. 8, p 1840, 2002 https://doi.org/10.1021/jp013730h
  9. M. P. Seah and S. J. Spencer, 'Ultrathin $SiO_2$ on Si II. Issues in quantification of the oxide thickness', Surf. Interface Anal., Vol. 33, No. 8, p. 640, 2002
  10. F. Yano, A. Hiraoka, T. Itoga, H. Kojima, K. Kanehori, and Y. Mitsui, 'X -ray photoelectron spectroscopy study of submonolayer native oxides on. HF-treated Si surfaces', J. Vac. Sci. Technol. A, Vol. 13, No. 6, p. 2671, 1995 https://doi.org/10.1116/1.579466