Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Fabrication of silicon nano-wire MOSFET photodetector for high-sensitivity image sensor

고감도 이미지 센서용 실리콘 나노와이어 MOSFET 광 검출기의 제작

  • Shin, Young-Shik (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Seo, Sang-Ho (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Do, Mi-Young (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Shin, Jang-Kyoo (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Park, Jae-Hyoun (Korea Electronics Technology Institute) ;
  • Kim, Hoon (Korea Electronics Technology Institute)
  • 신영식 (경북대학교 전자전기컴퓨터학부) ;
  • 서상호 (경북대학교 전자전기컴퓨터학부) ;
  • 도미영 (경북대학교 전자전기컴퓨터학부) ;
  • 신장규 (경북대학교 전자전기컴퓨터학부) ;
  • 박재현 (한국전자부품연구원) ;
  • 김훈 (한국전자부품연구원)
  • Published : 2006.01.31
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Abstract

We fabricated Si nano-wire MOSFET by using the conventional photolithography with a $1.5{\mu}m$ resolution. Si nano-wire was fabricated by using reactive ion etching (RIE), anisotropic wet etching and thermal oxidation on a silicon-on-insulator (SOI) substrate, and its width is 30 nm. Logarithmic circuit consisting of a NMOSFET and Si nano-wire MOSFET has been constructed for application to high-sensitivity image sensor. Its sensitivity was 1.12 mV/lux. The output voltage swing was 1.386 V.

Keywords

References

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