Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Modeling and Optimization of $sub-0.1\;{\mu}m$ gate Metamorphic High Electron Mobility Transistors

$0.1\;{\mu}m$ 이하의 게이트 길이를 갖는 Metamorphic High Electron Mobility Transistor의 모델링 및 구조 최적화

  • Han Min (Millimeter-wave INnovation Technology research center, MINT) ;
  • Kim Sam-Dong (Millimeter-wave INnovation Technology research center, MINT) ;
  • Rhee Jin-Koo (Millimeter-wave INnovation Technology research center, MINT)
  • 한민 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 김삼동 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 이진구 (동국대학교 밀리미터파 신기술 연구센터)
  • Published : 2005.03.01
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Abstract

In this paper, we analyzed the DC and RF characteristics of $0.1\;{\mu}m$ metamorphic high electron mobility transistor (MHEMT) using the ISE-TCAD simulation tool. we also analyzed the effects or the scaling on vertical and lateral dimensions such as a gate length, source-drain spacing, and channel thickness. We discussed the degradation of extrinsic transconductance $g_{m,max}$ in the MHEMTs adopting the gate length $(L_g)$ of $sub-0.1\;{\mu}m$. We suggested the model describing the effects on the vertical and lateral parameter scaling.

본 논문에서는 $0.1\;{\mu}m$ 이하의 게이트 길이를 갖는 MHEMT의 DC 및 RF 특성을 상용 시뮬레이터인 ISE-TCAD tool을 이용하여 결과를 고찰하였다. 이후 MHEMT의 게이트 길이와, 소스-드레인 간격 및 채널 두께를 변화시켜 가면서 소자의 수평, 수직 Scaling효과가 소자 특성에 미치는 영향을 비교하였으며, 게이트 길이 $(L_g)$가 $0.1\;{\mu}m$ 이하로 감소함에 따라 $g_{m,max}$가 같이 감소하는 현상에 대해서 논의해 보았다. 또한 이 현상을 가지고 소자의 횡적, 종적 파라미터의 scaling 효과에 대한 모델을 제시 했다.

Keywords

References

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