JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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4H-SiC Planar MESFET for Microwave Power Device Applications

  • Na, Hoon-Joo (School of Materials Science and Engineering, Seoul National University) ;
  • Jung, Sang-Yong (School of Materials Science and Engineering, Seoul National University) ;
  • Moon, Jeong-Hyun (School of Materials Science and Engineering, Seoul National University) ;
  • Yim, Jeong-Hyuk (School of Materials Science and Engineering, Seoul National University) ;
  • Song, Ho-Keun (School of Materials Science and Engineering, Seoul National University) ;
  • Lee, Jae-Bin (Sangshin Elecom Co, Ltd.) ;
  • Kim, Hyeong-Joon (School of Materials Science and Engineering, Seoul National University)
  • Published : 2005.06.30
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Abstract

4H-SiC planar MESFETs were fabricated using ion-implantation on semi-insulating substrate without recess gate etching. A modified RCA method was used to clean the substrate before each procedure. A thin, thermal oxide layer was grown to passivate the surface and then a thick field oxide was deposited by CVD. The fabricated MESFET showed good contact properties and DC/RF performances. The maximum oscillation frequency of 34 GHz and the cut-off frequency of 9.3 GHz were obtained. The power gain was 10.1 dB and the output power of 1.4 W was obtained for 1 mm-gate length device at 2 GHz. The fabricated MESFETs showed the charge trapping-free characteristics and were characterized by the extracted small-signal equivalent circuit parameters.

Keywords

References

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