Abstract
We investigated numerically the evolutions of several chemical species which are important for film growth and particle generation in the pulsed $SiH_4$ plasmas. During the plasma-on, the $SiH_x$ concentration increases with time mainly by the generation reaction from $SiH_4$, but, during the plasma-off, decreases because of the hydrogen adsorption reaction. During the plasma-on, the concentrations of negative ions increase with time by the polymerization reactions of negative ions and those become almost zero in the sheath regions because of the electrostatic repulsion. During the plasma-off, the concentrations of negative ions decrease with time by the neutralization reactions with positive ions and some negative ions can diffuse toward the sheath regions because there is no electric field inside the reactor. The polymerized negative ions of higher mass can be reduced successfully by using the pulsed plasma process.
