대한전기학회논문지:전기물성ㆍ응용부문C (The Transactions of the Korean Institute of Electrical Engineers C)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

완전공핍 광 싸이리스터에서 입출력의 높은 아이솔레이션을 위한 수직 입사형 구조에 관한 연구

Depleted Optical Thyristor using Vertical-Injection Structure for High Isolation Between Input and Output

  • 최운경 (중앙대 공대 전자전기공학부) ;
  • 김두근 (중앙대 공대 전자전기공학부) ;
  • 문년태 (중앙대 공대 전자전기공학부) ;
  • 김도균 (중앙대 공대 전자전기공학부) ;
  • 최영완 (중앙대 전자전기공학부)
  • 발행 : 2005.01.01
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초록

This study shows the lasing characteristics of InGaAs/InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor (DOT) using the vertical window. The measured switching voltage and current are 3.36 V and 10 ㎂, respectively. The lasing threshold current is 131 mA at 25 ℃. The output peak wavelength is 1570 nm at a bias current of 1.22 Ith and there is not input signal anymore in the output port. The vertical injection depleted optical thyristor - laser diode (VIDOT-LD) using the vertical-injection structure shows very good isolation between input and output signal.

키워드

참고문헌

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