Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Fixed Abrasive Pad with Self-conditioning in CMP Process

Self-conditioning 고정입자패드를 이용한 CMP

  • Published : 2005.04.01
Download PDF
⟨ Previous Next ⟩

Abstract

Chemical mechanical polishing(CMP) process is essential technology to be applied to manufacturing the dielectric layer and metal line in semiconductor devices. It has been known that overpolishing in CMP depends on pattern selectivity as a function of density and pitch, and use of fixed abrasive pad(FAP) is one method which can improve the pattern selectivity. Thus, dishing & erosion defects can be reduced. This paper introduces the manufacturing technique of FAP using hydrophilic polymers with swelling characteristic in water and explains the self-conditioning phenomenon. When applied to tungsten blanket wafers, the FAP resulted in appropriate performance in point of uniformity, material selectivity and roughness. Especially, reduced dishing and erosion was observed in CMP of tungsten pattern wafer with the proposed FAP.

Keywords

References

  1. 김상용, 서용진, 이우선, 이강현, 장의구, '슬러리와 패드 변화에 따른 텅스텐 플러그 CMP 공정의 최적화', 전기전자재료학회논문지, 13권,7호, p. 568, 2000
  2. 김상용, 서용진, 이우선, 장의구, '실리콘 웨이퍼위에 증착된 실리케이트 산화막의 CMP 슬러리 오염 특성', 전기전자재료학회논문지, 13 권, 2호, p. 131, 2000
  3. J. M. Steigerwarld, R. Zirpoli, S. P. Murarka, D. Price, and R. Gutmann, 'Pattern geometry effects in the chemical mechanical polishing of inlaid copper structures', J. Electrochemical Society, Vol. 141, No. 10, p. 2842, 1994 https://doi.org/10.1149/1.2055048
  4. K. Smekalin and D. Fertig, 'Microscale dishing effect in a chemical mechanical planarization process for trench isolation', J. Electrochemical Society, Vol. 143, No. 12, p. 1281, 1996 https://doi.org/10.1149/1.1836938
  5. D. A. Hansen, G. Moloney, and M. E. Witty, 'Copper CMP: The role of barrier metal and its effect on dishing and oxide erosion', Electrochemical Society Proceedings Series, Vol. 99-37, p. 136, 2000
  6. R. S. Subramanian and R. M. Appat, 'A model of chemical mechanical planarization of patterned wafers with fixed abrasives', Electrochemical and Solid-state letters, Vol. 4, No. 12, p. G115, 2001
  7. H. Y. Kim, B. Y. Park, H. D. Jeong, D. A. Dornfeld, and S. I. Lee, 'Applications of fixed abrasive pad using hydrophilic polymers In STI CMP', Annual Meeting Proceeding in ASPE, p. 661, 2002
  8. V. Koinkar, R. Golzarian, Q. Luo, M. VanHanehem, J. Shen, and P. Burke, 'Chemical mechanical planarization of copper interconnects using fixed abrasive polishing pad', Proceeding of 5th International CMP-MIC Conference, p, 58, 2000
  9. A. Romer, T. Donohue, J. Gagliardi, F. Weimar, P. Thieme, and M. Hollatz, 'STI CMP using fixed abrasive: demands, measurement methods and results', Proceeding of 5th International CMP- MIC Conference, p. 265, 2000
  10. L. H. Sperling, 'Introduction to Physical Polymer Science', John Wiley & Sons, p. 147, 1992
  11. F. B. Kaufman, D. B. Thompson, D. J. Pearsons, and M. B. Small, 'Chemical mechanical polishing for fabricating patterned W metal features as chip interconnects', J. Electrochemical Society, Vol. 138, No. 11, p. 3460, 1991
  12. Samsung Electronics Co., Ltd., 'Chemical Mechanical Polishing Slurry', Korea Patent, No. 2001-0037315
  13. H. Y. Kim, H. J. Kim, and H. D. Jeong, 'Development of an abrasive Embedded pad for dishing reduction and uniformity enhancement', J. of KPS, Vol. 37, No. 6, p. 945, 2000