Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Variation of the Representation Ellipsoid for Refractive Index of Bi12GeO20Single Crystal by an Electric Field

전기장에 의한 Bi12GeO20 단결정의 굴절률 표시타원체의 변형

  • 이수대 (경남대학교 응용수리학부) ;
  • 이찬구 (경남대학교 응용수리학부)
  • Published : 2005.01.01
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Abstract

We derived a formula which can calculate the space distribution of refractive index variation by an applied electric field about Bi$_{12}$ GeO$_{20}$ single crystal. Stereographic projection maps of refractive index variation by an applied electric field were made out using numerical value to be calculated by this formula. By the calculated results, since an electric field had applied to [(equation omitted) 1 1] direction and [1 (equation omitted) 1] direction of Bi$_{12}$ GeO$_{20}$ crystal, positive variation of the refractive index of [(equation omitted) 1 1] direction and [1 (equation omitted) 1] direction was the largest. The incremented refractive index per unit electric field was +3.2410${\times}$10$^{-11}$ V$^{-1}$ for the wavelength of 6328 $\AA$. Since an electric field had applied to [1 1 1] direction and [(equation omitted) 1] direction, negative variation of the refractive index of [1 1 1] direction and [(equation omitted) 1] direction was the largest. The decremented refractive index per unit electric field was -3.2410${\times}$10$^{-11}$ V$^{-1}$ for the wavelength of 6328 $\AA$.

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References

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