한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제18권2호
  • /
  • Pages.169-173
  • /
  • 2005
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  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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열형센서용 니켈 산화막의 형성 및 특성분석

Formation of Ni Oxide Thin Film and Analysis of Its Characteristics for Thermal Sensors

  • 이응안 (대양전기공업(주) 연구소 센서시스템팀) ;
  • 서정환 (대양전기공업(주) 연구소 센서시스템팀) ;
  • 노상수 (대양전기공업(주) 연구소 센서시스템팀)
  • 발행 : 2005.02.01
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초록

Ni oxide thin films were formed through annealing treatment in the atmosphere after Ni thin films deposited by a r.f. magnetron sputtering method and then electric and material properties were analyzed for application to thermal sensors. Resistivity of Ni thin films decreased after annealing treatment at 30$0^{\circ}C$ and 40$0^{\circ}C$ for five hours due to crystallization of Ni thin films but the value increased over 45$0^{\circ}C$ because of Ni thin film's oxidation. Resistivity values of Ni thin films were in the range of 10.5 $\mu$Ωcm/$^{\circ}C$ to 2.84${\times}$10$^4$$\mu$Ωcm/$^{\circ}C$ according to the degree of Ni oxidation. Also temperature coefficient of resistance(TCR) values of Ni oxide thin films depended on the degree of Ni oxidation such as 2,188 ppm/$^{\circ}C$ to 5,630 ppm/$^{\circ}C$ in the temperature range of 0 $^{\circ}C$∼150 $^{\circ}C$. The results demonstrate that Ni oxide thin films of annealing treatment at 40$0^{\circ}C$ for 5hours could be more advantageous than pure Ni thin films and Pt thin films from a point of output properties and TCR, applied to thermal sensors.

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