Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characteristics of ZnO Thin Films of FBAR using ALD and RF Magnetron Sputtering

ALD와 RF 마그네트론 스퍼터링을 이용한 FBAR 소자의 ZnO 박막증착 및 특성

  • 신영화 (경원대학교 전기전자공학부) ;
  • 권상직 (경원대학교 전기전자공학부) ;
  • 윤영수 (건국대학교 신기술융합학과)
  • Published : 2005.02.01
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Abstract

Piezoelectric ZnO thin films were for the first time formed on SiO$_2$/Si(100) substrate using 2-step deposition, atomic layer deposition(ALD) and RF magnetron sputtering deposition, for film bulk acoustic resonator(FBAR) applications. The ZnO buffer layer by ALD was deposited using alternating diethyl zinc(DEZn)/$H_2O$ exposures and ultrahigh purity argon gas for purging. The ZnO films by 2-step deposition revealed stronger c-axis-preferred orientation and smoother surface than those by the conventional RF sputtering method. The solidly mounted resonator(SMR)-typed FBAR fabricated by using 2-step deposition method revealed higher quality factor of 580 and lower return loss of -17.35dB. Therefore the 2-step deposition method in this study could be applied to the FBAR device fabrication.

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References

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