Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study of Oxygen Vacancy on SnO2 Thin Films

SnO2 박막의 산소 빈자리에 관한 연구

  • 정진 (조선대학교 물리학과) ;
  • 최승평 (조선대학교 물리학과)
  • Published : 2005.02.01
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Abstract

The study of Oxygen Vacancy on SnO$_2$ thin films grown by thermal chemical vapor deposition were investigated with different substrate temperature. X-ray diffraction showed that the crystallinity of the grown thin films increased with increasing substrate temperature. Two narrow peaks and two broad peaks were observed from the photoluminescence measurements at 6 K. The intensity and shape of the broad peaks were changed with increasing substrate temperature. It was concluded that the origin of the broad peak at 2.4 eV was due to oxygen vacancies and that of peak at 3.1 eV was related to structural defects. Hall effect measurements showed that the carrier density was decreased as increasing deposition time from 10 to 30 min., but increased for the deposition of 60 min.

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References

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