한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제18권3호
  • /
  • Pages.276-283
  • /
  • 2005
  • /
  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지
DOI QR코드

DOI QR Code

비정질 n형 Si 박막을 이용한 자기터널링 트랜지스터 제작과 특성

Fabrication and Characteristics of Magnetic Tunneling Transistors using the Amorphous n-Type Si Films

  • 이상석 (상지대학교 컴퓨터전자물리학과) ;
  • 이진용 (상지대학교 컴퓨터전자물리학과) ;
  • 황도근 (상지대학교 컴퓨터전자물리학과)
  • 발행 : 2005.03.01
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

Magnetic tunneling transistor (MTT) device using the amorphous n-type Si semiconductor film for base and collector consisting of the [CoFe/NiFe](free layer) and Si(top layer) multilayers was used to study the spin-dependent hot electron magnetocurrent (MC) and tunneling magnetoresistance (TMR) at room temperature. A large MC of 40.2 % was observed at the emitter-base bias voltage ( $V_{EB}$ ) of 0.62 V. The increasing emitter hot current and transfer ratio ( $I_{C}$/ $I_{E}$) as $V_{EB}$ are mainly due to a rapid increase of the number of conduction band states in the Si collector. However, above the $V_{EB}$ of 0.62 V, the rapid decrease of MC was observed in amorphous Si-based MTT because of hot electron spin-dependent elastic scattering across CoFe/Si interfaces.

키워드

참고문헌

  1. S. S. P. Parkin, 'Applications of magnetic nanostructures', Taylor & Francis Inc, Advanced in Condensed Matter Science, Vol. 3, p. 237, 2002
  2. D. J. Monsma, J. C. Lodder, Th. J. A. Popma, and B. Dieny, 'Perpendicular hot electron spin valve effect in a new magnetic field sensor: the spin-valve transistor', Phys. Rev. Lett., Vol. 74, No. 26, p. 5260, 1995
  3. R. Sato and K. Mizushima, 'Spin-valve transistor with an Fe/Au/Fe(001) base', Appl. Phys. Lett., Vol. 79, No. 8, p, 1157, 2001
  4. S. van Dijken, X. Jiang, and S. S. P. Parkin, 'Room temperature operation of a high output current magnetic tunnel transistor', Appl. Phys. Lett, Vol. 80, No. 18, p. 3364, 2002 https://doi.org/10.1063/1.1461073
  5. S. van Dijken, X. Jiang, and S. S. P. Parkin, 'Spin-dependent hot electron transport in NiFe and CoFe films on GaAs(001)', Phys. Rev. E, Vol. 66, No. 9, p. 94417, 2002
  6. S. van Dijken, X. Jiang, and S. S. P. Parkin, 'Comparison of magnetocurrent and transfer ratio in magnetic tunnel transistors with spin-valve bases containing Cu and Au spacer layers', Appl. Phys. Lett, Vol. 82, No. 5, p. 775, 2003
  7. S. van Dijken, X. Jiang, and S. S. P. Parkin, 'Nonrnonotonic bias voltage dependence of the magnetocurrent in GaAs-based magnetic tunnel transistors', Phys. Rev. Lett, Vol. 90, No. 19, p. 197203, 2003
  8. 송윤귀, 최영식, 김남호, 류지구, 'CMOS 공정에 의한 suppressed sidewell injection mag netotransistor의 특성', 전기전자재료학회논문지, 17권, 10호, p. 1029, 2004
  9. S. S. Lee, J. Y. Lee, and D. G. Hwang, 'Relative magneto-current of magnetic tunnel transistors with amorphous n-type Si film', Journal of Magnetics, Vol. 9, No. 1, p. 23, 2004
  10. M. Ohring, 'Materials Science of Thin Films', Academic Press, Inc, p. 357. 2002
  11. S. R. Lee, C. M. Choi, and Y. K. Kim, 'Effect of Zr concentration on the microstructure of Al and the magnetoresistance properties of the magnetic tunnel junction with a Zr -alloyed AlO oxide barrier', Appl. Phys. Lett., Vol. 83, No.2, p. 317, 2003
  12. 이영민, 송오성, '절연막층의 플라즈마 산화시간에 따른 CoFe/AlO/CoFe/NiFe 구조의 터널 자기저항 효과 연구', 전기전자재료학회논문지, 15권,4호, p. 373, 2002
  13. 서수정, 김영근, 이성래, '거대 자기저항 소자와 터널 자기저항 소자의 원리와 응용', 전기전자재료학회지, 14권, 5호, p. 3, 2001
  14. S. M. Sze, 'Semiconductor Sensors', Wiley Interscience, p. 249, 1994
  15. S. S. Lee, J. Y. Lee, D. G. Hwang, K. Rhie, and J. R. Rhee, 'Fabrication and characteristics of magnetic tunnel transistors using the amorphous n-type Si Film', phys. stat. sol. (b), Vol. 241, No. 7, p. 1498, 2004