Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Physical Characteristics of PECVD SiON Films with Composition Variation

조성변화에 따른 PECVD SiON 박막의 물성특성

  • Cho Yu Jung (Dept. Materials Engineering, Korea University of Technology and Education) ;
  • Han Kil Jin (Dept. Materials Engineering, Korea University of Technology and Education) ;
  • Kim Yeong Cheol (Dept. Materials Engineering, Korea University of Technology and Education) ;
  • Seo Hwa Il (School of Information Technology, Korea University of Technology and Education)
  • 조유정 (한국기술교육대학교 신소재공학과) ;
  • 한길진 (한국기술교육대학교 신소재공학과) ;
  • 김영철 (한국기술교육대학교 신소재공학과) ;
  • 서화일 (한국기술교육대학교 정보기술공학부)
  • Published : 2005.09.01
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Abstract

Silicon oxynitride films were deposited using ammonia as a nitrogen source via PECVD (plasma enhanced chemical vapor deposition) to study the physical properties of the films. Silane and nitrous oxide were used as silicon and oxygen sources, respectively. The composition of the silicon oxynitride films was well controlled by changing the ratios of the sources and confirmed by XPS. The silicon oxynitride films with high oxygen content showed bigger compressive stress and less refractive index, while the values of surface roughness were around 1 nm, irrespective of the variation of the source ratios.

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