Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)
- Volume 4 Issue 1 Serial No. 10
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- Pages.23-27
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- 2005
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- 1738-2270(pISSN)
Simulation Methodology for Diffusion Process in Poly-silicon
다결정 실리콘의 확산 공정 시뮬레이션
- Lee, Hoong-Joo (Dept. of Computer System Engineering, Information Display Research Center, Sangmyung University) ;
- Lee, Jun-Ha (Dept. of Computer System Engineering, Information Display Research Center, Sangmyung University)
- Published : 2005.03.01
Abstract
This paper presents a simulation methodology for the poly-silicon oriented TCAD(technology-CAD) system. A computer simulation environment for the poly-silicon processing has been set up with the proper adoption of the two-stream model for ion-doping, diffusion, and defects inside of grain and on the grain boundary. After the simulator calibration, simulation results for the poly-silicon diffusion hat shown a good agreement with the SIMS data.