Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Liquid Crystal Alignment Effects on SiOx Thin Film by Electron Beam Evaporation Method

전자빔증착법을 통한 SiOx 박막의 액정 배향 효과

  • 강형구 (연세대학교 전기전자공학과) ;
  • 한진우 (연세대학교 전기전자공학과) ;
  • 강수희 (연세대학교 전기전자공학과) ;
  • 김종환 (연세대학교 전기전자공학과) ;
  • 김영환 (연세대학교 전기전자공학과) ;
  • 황정연 (연세대학교 전기전자공학과) ;
  • 서대식 (연세대학교 전기전자공학과)
  • Published : 2005.11.01
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Abstract

By using $45^{\circ}$ obliqued evaporation method with electron beam system, uniformly vertical liquid crystal (LC) alignment was achieved. And a high pretilt angles of about $2.5^{\circ}$ were measured. Also, it was verified that there are no variations of pretilt angle as a function of $SiO_x$ thin film thickness 20 nm and 50 nm. A good LC alignment states were observed at annealing temperature of $250^{\circ}C$. Consequently, the high pretilt angle and the good thermal stability of LC alignment by $45^{\circ}$ obliqued electron beam evaporation method on the $SiO_x$ thin film can be achieved.

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References

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