대한전자공학회논문지SD (Journal of the Institute of Electronics Engineers of Korea SD)

대한전자공학회 (The Institute of Electronics and Information Engineers)
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전력 반도체 $p^{+}n$ 접합의 해석적 항복전압

Analytical Breakdown Voltages of $p^{+}n$ Junction in Power Semiconductor Devices

  • 정용성 (서라벌대학 멀티미디어과)
  • 발행 : 2005.10.01
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초록

Si, GaAs, InP 및 $In_{0.53}Ga_{0.47}AS$ 계단형 $p^{+}n$ 접합에서의 항복전압을 위한 해석적 표현식을 유도하였다. 해석적 항복전압을 위해 각 물질에 대한 Marsland의 lucky drift 파라미터를 이용하여 유효이온화계수를 각각 추출하였고, 이의 이온화 적분을 통해 얻은 해석적 항복전압 결과는 $10^{14}cm\;^{-3}\~5\times10\;^{17}cm\;^{-3}$도핑 농도 범위에서 실험 결과와 $10\%$ 오차 범위 이내로 잘 일치하였다.

Analytical expressions for breakdown voltages of abrupt $p^{+}n$ junction of Si, GaAs, InP and In$In_{0.53}Ga_{0.47}AS$ were induced. Getting analytical breakdown voltages, effective ionization coefficients were extracted using lucky drift parameters of Marsland for each materials. The results of analytical breakdown voltages followed by ionization integral agreed well with experimental result within 10$\%$ in error for the doping concentration in the range of $10^{14}cm\;^{-3}\~5\times10\;^{17}cm\;^{-3}$.

키워드

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