대한전자공학회논문지TC (Journal of the Institute of Electronics Engineers of Korea TC)

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

Doherty 증폭기의 열 메모리 효과 모델링과 보상

Thermal Memory Effect Modeling and Compensation in Doherty Amplifier

  • Lee Suk-Hui (Dept. of Electroics Eng.,Dankook University) ;
  • Lee Sang-Ho (Dept. of Electroics Eng.,Dankook University) ;
  • Bang Sung-Il (Dept. of Electroics Eng.,Dankook University)
  • 발행 : 2005.09.01
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초록

RF 전력증폭기 및 Doherty 전력증폭기의 열 메모리 효과는 변조신호의 대역폭과 동작 전력의 레벨에 따라 민감하게 영향을 미친다. 본 논문에서는 전기적인 비선형성을 정확히 모델링하고 열 메모리 효과가 Doherty 증폭기의 왜곡형성에 어떤 영향을 미치는지에 대해 연구하였다. Doherty 증폭기의 열 메모리 특성을 모델링하기 위하여 순시적으로 소모되는 전력과 순시 접합온도의 정확한 관계식을 정립하여 제안하였다. 제안된 모델의 파라미터는 서로 다른 여기상태에 따라 전력증폭기의 특성이 결정되는데, 트랜지스터의 열 메모리 효과는 대역폭이 넓은 W-CDMA 및 UMTS 시스템에서 충분히 고려되어야 한다. 이러한 열 메모리 효과를 사전왜곡 함수에 적응하여 선형화된 전력증폭기의 출력스펙트럼에서 최대 20 dB정도의 ACLR 개선효과를 보인다. 측정결과는 60W급 LDMOS Doherty 전력증폭기로 측정하였으며, 열 메모리 보상기는 ADS로 검증하였다.

Memory effect, which influence the performance of Doherty amplifier, become more significant and critical in designing these circuits as the modulation signal bandwidth and operation power level increase. This paper reports on an attempt to investigate, model and quantity the contribution of the electrical nonlinearity effects and the thermal memory effects to a Doherty amplifier's distortion generation. Also this raper reports on the development of an accurate dynamic expression of the instantaneous junction temperature as a function of the instantaneous dissipated power. This expression has been used in the construction of an electrothermal model for the Doherty amplifier. Parameters for the nelv proposed behavior model were determined from the Doherty amplifier measurements obtained under different excitation conditions. This study led us to conclude that the effects of the transistor self-heating phenomenon are important for signals with wideband modulation bandwidth(ex. W-CDMA or UMTS signal). Doherty amplifier with electrothermal memory effect compensator enhanced ACLR performance about 20 dB than without electrothemal memory effect compensator. Experiment results were mesured by 60W LDMOS Doherty amplifier and electrothermal memory effect compensator was simulated by ADS.

키워드

참고문헌

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