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The Effect of the Heat Treatment of the ZrO2 Buffer Layer and SBT Thin Film on Interfacial Conditions and Ferroelectric Properties of the SrBi2Ta2O9/ZrO2/Si Structure

ZrO2 완충층과 SBT 박막의 열처리 과정이 SrBi2Ta2O9/ZrO2/Si 구조의 계면 상태 및 강유전 특성에 미치는 영향

  • Oh, Young-Hun (School of Materials Science and Engineering, Busan National University) ;
  • Park, Chul-Ho (School of Materials Science and Engineering, Busan National University) ;
  • Son, Young-Guk (School of Materials Science and Engineering, Busan National University)
  • 오영훈 (부산대학교 재료공학부) ;
  • 박철호 (부산대학교 재료공학부) ;
  • 손영구 (부산대학교 재료공학부)
  • Published : 2005.09.01

Abstract

To investigate the possibility of the $ZrO_2$ buffer layer as the insulator for the Metal-Ferroelectric-Insulator-semiconductor (MFIS) structure, $ZrO_2$ and $SrBi_2Ta_2O_9$ (SBT) thin films were deposited on the P-type Si(111) wafer by the R.F. magnetron-sputtering method. According to the process with and without the post-annealing of the $ZrO_2$ buffer layer and SBT thin film, the diffusion amount of Sr, Bi, Ta elements show slight difference through the Glow Discharge Spectrometer (GDS) analysis. From X-ray Photoelectron Spectroscopy (XPS) results, we could confirm that the post-annealing process affects the chemical binding condition of the interface between the $ZrO_2$ thin film and the Si substrate. Compared to the MFIS structure without the post-annealing of the $ZrO_2$ buffer layer, memory window value of MFlS structure with post-annealing of the $ZrO_2$ buffer layer were considerably improved. The window memory of the Pt/SBT (260 nm, $800^{\circ}C)/ZrO_2$ (20 nm) structure increases from 0.75 to 2.2 V under the applied voltage of 9 V after post-annealing.

Keywords

References

  1. G. P. Choi, J. H. Ann, W. J. Lee, T. H. Sung, and H. G Kim, 'Phase Formations and Electrical Properties of doped-PZT/ $PbTiO_3$ Films Deposited by Reactive Sputtering Using Multi-Targets,' Muter: Sci. and Eng. B, 41 [1] 16-22 (1996) https://doi.org/10.1016/S0921-5107(96)01616-9
  2. T. Hirai, K. Teramoto, T. Goto, and Y. Tarui, 'Formation of Metal/Ferroelectric!InsulatorlSemiconductor Structure with a $CeO_2$ Buffer Layer,' Jpn. J. Appl. Phys., 33 Part 1 [9b] 5219-22 (1994) https://doi.org/10.1143/JJAP.33.5219
  3. J. H. Kim, S. G Kang, and H. T. Eun, 'Effects of $Y_2O_3$ Buffer Layer on Ferroelectric Properties of $YMnO_3$ Thin Films Fabricated on $Pt/TiO_2/SiO_2/Si$ Substrate(in Korean),' J. Kor. Ceram. Soc., 37 [11] 1097-104 (2000)
  4. D. R. Lampe, D. A. Adams, M. Austin, M. polinsky, J. Dzimianski, S. Sinharoy, H. Buhay, P. Brabant, and Y. M. Liu, 'Process Integration of the Ferroelectric Memory FETs for NDRO FERAM,' Ferroelectrics, 133 61-72 (1992) https://doi.org/10.1080/00150199208217977
  5. Y. G. Son, 'Electrical Properties of $Ba_{0.5}Sr_{0.5}TiO_3$ Thin Film with Various Heat Treatment Conditions(in Korean),' J. Kor. Ceram. Soc., 38 [5] 492-98 (2001)
  6. B. Cheng, M. Cao, R. Rao, A. Inani, P. V. Voorde, W. M. Green, J. M. C. Stork, Z. Yu, P. M. Zeizoff, and J. C. S. Woo, 'The Impact of High-K Gate Dielectrics and Metal Gate Electrodes on Sub-100 nm MOSFETs,' IEEE Trans. Electron Devises, 46 [7] 1537-42 (1999) https://doi.org/10.1109/16.772508
  7. A. Mehner, H. Klumper-Westkamp, F. Hoffmann, and P. Mayr, 'Crystallization and Residual Stress Formation of Sol-Gel-Derived Zirconia Films,' Thin Solid Film, 308/309 363-68 (1997) https://doi.org/10.1016/S0040-6090(97)00579-8
  8. K. Goedicke, J.-S. Liebig, O. Zywitzki, and H. Sahm, 'Influence of Process Parameters on the Structure and the Properties of $ZrO_2$ Coatings Deposited by Reactive Pulsed Magnetron Sputtering(PMS),' Thin Solid Film, 377/378 37-42 (2000) https://doi.org/10.1016/S0040-6090(00)01381-X
  9. J. S. Kim, H. A. Marzouk, and P. J. Reucroft, 'Deposition and Structural Characterization of $ZrO_2$ and Yttria-Stabilized $ZrO_2$ Films by Chemical Vapor Deposition,' Thin Solid Film, 254 33-8 (1995) https://doi.org/10.1016/0040-6090(94)06274-O
  10. P. Tejedor, C. Ocal, E. Barrena, R. Jimenez, C. Alemany, and J. Mendiola, 'Composition-Related Effects of Microstructure on the Ferroelectric Behavior of SBT Thin Films,' Appl. Surf. Sci., 175/176 759-63 (2001) https://doi.org/10.1016/S0169-4332(01)00112-X