Transactions on Electrical and Electronic Materials

  • 제6권4호
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  • Pages.164-168
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  • 2005
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Polishing Mechanism of TEOS-CMP with High-temperature Slurry by Surface Analysis

  • Kim, Nam-Hoon (Research Institute of Energy Resources Technology, Chosun University) ;
  • Seo, Yong-Jin (Department of Electrical and Electronic Engineering, Daebul University) ;
  • Ko, Pil-Ju (Department of Electrical Engineering, Chosun University) ;
  • Lee, Woo-Sun (Department of Electrical Engineering, Chosun University)
  • 발행 : 2005.08.01
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초록

Effects of high-temperature slurry were investigated on the chemical mechanical polishing (CMP) performance of tetra-ethyl ortho-silicate (TEOS) film with silica and ceria slurries by the surface analysis of X-ray photoelectron spectroscopy (XPS). The pH showed a slight tendency to decrease with increasing slurry temperature, which means that the hydroxyl $(OH^-)$ groups increased in slurry as the slurry temperature increased and then they diffused into the TEOS film. The surface of TEOS film became hydro-carbonated by the diffused hydroxyl groups. The hydro-carbonated surface of TEOS film could be removed more easily. Consequently, the removal rate of TEOS film improved dramatically with increasing slurry temperature.

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