Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Complex dielectric function of CdTe/GaAs thin films studied by spectroscopic ellipsometry

타원 분광기를 이용한 CdTe/GaAs 박막의 복소 유전함수에 관한 연구

  • Jeen, Gwang-Soo (Department of Physics, Busan National University) ;
  • Jo, Jae-Hyuk (Department of Physics, Busan National University) ;
  • Park, Hyo-Yeol (Department of Semiconductors Applications, Ulsan College)
  • Published : 2005.08.01
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Abstract

Spectroscopic ellipsomerty measurements of the complex dielectric function of the CdTe thin films grown on GaAs(100) substrates by hot wall epitaxy have been performed in 1.5${\~}$5.5 eV photon energy range at room temperature. The spectroscopic ellipsometer spectra revealed distinct structures at energies of the $E_l,\;E_1+{\Delta}_1$, and $E_2$ critical points. These energies were decreased with increasing thickness of CdTe thin films.

Hot-wall epitaxy 법으로 GaAs 기판 위에 성장시킨 CdTe 박막을 실온에서 포톤에너지 1.5${\~}$5.5 eV 영역에서 타원 분광기로 복소 유전함수를 구하였다. 타원분광기의 스펙트럼에서는 $E_l,\;E_1+{\Delta}_1$, $E_2$의 임계점이 관찰되었으며 이들 에너지는 CdTe 박막의 두께가 증가함에 따라 감소하였다.

Keywords

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