Journal of the Microelectronics and Packaging Society (마이크로전자및패키징학회지)
- Volume 12 Issue 1 Serial No. 34
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- Pages.27-33
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- 2005
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- 1226-9360(pISSN)
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- 2287-7525(eISSN)
Effect of Microstructure on Alternating Current-induced Damage in Cu Lines
- Park Young-Bae (Max-Planck-Institut fur Metallforschung, Stuttgart, Germany, School of Materials Science and Engineering, Andong National University)
- Published : 2005.03.01
Abstract
The effect of microstructure on alternating current-induced damage in 200 and 300 nm thick polycrystalline sputtered Cu lines on Si substrates has been investigated. Alternating currents were used to generate temperature cycles (with ranges from 100 to