Journal of the Korean Ceramic Society (한국세라믹학회지)

  • 제42권7호
  • /
  • Pages.455-460
  • /
  • 2005
  • /
  • 1229-7801(pISSN)
  • /
  • 2234-0491(eISSN)
The Korean Ceramic Society (한국세라믹학회)
권호 표지
DOI QR코드

DOI QR Code

Electrical Properties of DC Sputtered Titanium Nitride Films with Different Processing Conditions and Substrates

  • Jin, Yen (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Kim, Young-Gu (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Kim, Jong-Ho (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Kim, Do-Kyung (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology)
  • 발행 : 2005.07.01
Download PDF
⟨ Previous Next ⟩

초록

Deposition of TiN$_{x}$ film was conducted with a DC sputtering technique. The effect of the processing parameters such as substrate temperature, deposition time, working pressure, bias power, and volumetric flowing rate ratio of Ar to N$_{2}$ gas on the resistivity of TiN$_{x}$ film was systematically investigated. Three kinds of substrates, soda-lime glass, (100) Si wafer, and 111m thermally grown (111) SiO$_{2}$ wafer were used to explore the effect of substrate. The phase of TiN$_{x}$ film was analyzed by XRD peak pattern and deposition rate was determined by measuring the thickness of TiNx film through SEM cross-sectional view. Resistance was obtained by 4 point probe method as a function of processing parameters and types of substrates. Finally, optimum condition for synthesizing TiN$_{x}$ film having lowest resistivity was discussed.

키워드

참고문헌

  1. B. F. Chen, J. Hwang, G. P. Yu, and J. H. Huang, ' In Situ Observation of the Cracking Behavior of TiN Coating on 304 Stainless Steel Subjected to Tensile Strain,' Thin Solid Films, 352 173-78 (1999) https://doi.org/10.1016/S0040-6090(99)00342-9
  2. P. LeClair, G. P. Berera, and J. S. Moodera, ' Titanium Nitride Thin Films Obtained by a Modified Physical Vapor Deposition Process,' Thin Solid Films, 376 [1-2] 9-15 (2000) https://doi.org/10.1016/S0040-6090(00)01192-5
  3. R. H. Dauskardt, M. Lane, Q. Ma, and N. Krishna, ' Adhesion and Debonding of Multi-Layer Thin Film Structures,' Eng. Fract. Mech., 61 [141] 141-62 (1998) https://doi.org/10.1016/S0013-7944(98)00052-6
  4. V. Talyansky, R. D. Vispute, R. Ramesh, R. P. Sharma, T. Venkatesan, Y. X. Li, L. G. Salamanca-Riba, M. C. Wood, R. T. Lareau, K. A. Jones, and A. A. Iliadis, ' Fabrication and Characterization of Epitaxial AlN/TiN Bilayers on Sapphire,' Thin Solid Films, 323 [1-2] 37-41 (1998) https://doi.org/10.1016/S0040-6090(97)00902-4
  5. B. Straumal, N. Vershinin, K. Filonov, R. Dimitriou, and W. Gust, ' Masked Deposition of Decorative on Large Area Glass and Plastic Sheet,' Thin Solid Films, 351 [1-2] 204-08 (1999) https://doi.org/10.1016/S0040-6090(99)00204-7
  6. R. Gordon, ' Chemical Vapor Deposition of Coatings on Glass,' J. Non-Cryst. Solids, 218 81-91 (1997) https://doi.org/10.1016/S0022-3093(97)00198-1
  7. F. Vaz, J. Ferreira, E. Ribeiro, L. Rebouta, S. Lanceros-Mendez, J. A. Mendes, E. Alves, P. Goudeau, J. P. Reviere, F. Ribeiro, I. Mountinho, K. Pischow, and J. de Rijk, ' Influence of Nitrogen Content on the Structural, Mechanical and Electrical Properties of TiN Thin Films,' Surf. and Coat. Tech., 191 [2-3] 317-23 (2005) https://doi.org/10.1016/j.surfcoat.2004.01.033
  8. J. M. Wang, W. G. Liu, and T. Mei, ' The Effect of Thermal Treatment on the Electrical Properties of Titanium Nitride Thin Films by Filtered Arc Plasma Method,' Ceramics International, 30 [7] 1921-24 (2004) https://doi.org/10.1016/j.ceramint.2003.12.042
  9. H. Z. Durusoy, O. Duyar, A. Aydinli, and F. Ay, ' Influence of Substrate Temperature and Bias Voltage on the Optical Transmittance of TiN Films,' Vacuum, 70 [1] 21-8 (2003) https://doi.org/10.1016/S0042-207X(02)00663-2

피인용 문헌

  1. Structural and electrical characterization of CoTiN metal gates vol.117, pp.7, 2015, https://doi.org/10.1063/1.4908547