JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지

A 2-D Model for the Potential Distribution and Threshold Voltage of Fully Depleted Short-Channel Ion-Implanted Silicon MESFET's

  • Jit, S. (Department of Electronics Engineering Institute of Technology Banaras Hindu University) ;
  • Morarka, Saurabh (Department of Electronics Engineering Institute of Technology Banaras Hindu University) ;
  • Mishra, Saurabh (Department of Electronics Engineering Institute of Technology Banaras Hindu University)
  • Published : 2005.09.30
Download PDF
⟨ Previous Next ⟩

Abstract

A new two dimensional (2-D) model for the potential distribution of fully depleted short-channel ion-implanted silicon MESFET's has been presented in this paper. The solution of the 2-D Poisson's equation has been considered as the superposition of the solutions of 1-D Poisson's equation in the lateral direction and the 2-D homogeneous Laplace equation with suitable boundary conditions. The minimum bottom potential at the interface of the depletion region due to the metal-semiconductor junction at the Schottky gate and depletion region due to the substrate-channel junction has been used to investigate the drain-induced barrier lowering (DIBL) and its effects on the threshold voltage of the device. Numerical results have been presented for the potential distribution and threshold voltage for different parameters such as the channel length, drain-source voltage, and implanted-dose and silicon film thickness.

Keywords

References

  1. K. P. MacWilliams, and J. D. Plummer, 'Device physics and technology of complementary silicon MESFET's for VLSI applications,' IEEE Trans. Electron Devices, vol. 38, no. 12, pp. 2619-2631, Dec. 1991 https://doi.org/10.1109/16.158684
  2. J. Mendl, 'Theoretical, practical, and analogical limits in ULSI, 'IEDM Tech. Dig., p.8, 1983
  3. J. Nulman and J.P. Krusius, '2-GHz 150 ${\mu}W$ selfaligned Si-MESFET logic,' IEEE Electron Device Lett., vol. EDL-5, p. 169, 1984 https://doi.org/10.1109/EDL.1984.25869
  4. J. D. Marshal and J. D. Mendl, 'A sub- and near threshold current model for silicon MESFET's,' IEEE Trans. Electron Devices, vol. 35, p. 388, March 1988 https://doi.org/10.1109/16.2467
  5. J. D. Marshall and J. D. Meindl, 'An analytical twodimensional model for silicon MESFET's,' IEEE Trans. Electron Devices, vol. 35, p. 373, March 1988 https://doi.org/10.1109/16.2464
  6. P. Pandey, B. B. Pal and S. Jit, 'A new 2-D model for the potential distribution and threshold voltage of fully depleted short-channel Si-SOI-MESFETs,' IEEETrans. Electron Devices, vol. 51, p. 246, Feb. 2004 https://doi.org/10.1109/TED.2003.822225
  7. R. Anholt and T. W. Sigmon, 'Ion implantation effects on GaAs MESFET's,' IEEE Trans. Electron Devices, vol. 36, p. 250, 1989 https://doi.org/10.1109/16.19923
  8. C. S. Hou and C. Y. Wu, 'A 2-D analytic for the threshold-voltage of fully depleted short gate-length Si-SOI-MESFET's,' IEEE Trans. Electron Devices, vol. 42, p. 2156, Dec 1995 https://doi.org/10.1109/16.477774
  9. S.-P. Chin, and C.-Y. Wu, 'A new two-dimensional model for the potential distribution of short-gate-length MESFET's and its applications,' IEEE Trans. Electron Devices, vol. 39, p. 1928, Aug. 1992 https://doi.org/10.1109/16.144686
  10. P. S. Lin and C- Y. Wu, 'A new approach to analytically solving the two-dimensional Poisson''s equation and its application in short-channel MOSFET modeling,' IEEE Trans. Electron Devices, vol. ED-34, p. 1947, 1987 https://doi.org/10.1109/T-ED.1987.23180
  11. K. K. Young, 'Short-channel effects in fully depleted SOI-MOSFET's,' IEEE Trans. Electron Devices, vol. 36, p. 399, Feb. 1989 https://doi.org/10.1109/16.19942
  12. T. K. Chiang, Y. H. Wang, and M. P. Houng, 'Modeling of threshold voltage and subthreshold swing of short-channel SOI-MESFET's, Solid-State Electron, vol.-43, p.123, 1999 https://doi.org/10.1016/S0038-1101(98)00240-8
  13. K. N. Ratnakumar and J. D. Meindl, 'Short channel MOST threshold voltage model,' IEEE J. Solid State Circuits, vol.SC-17, p. 937, Oct.1982 https://doi.org/10.1109/JSSC.1982.1051843