Bulletin of the Korean Chemical Society

Korean Chemical Society (대한화학회)
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Behavior of Hydrogen-Terminated Si(111) Surface in Oxygen-Dissolved NH4F Solution with or without Cu(II) Ions

  • Bae, Sang-Eun (Department of Advanced Materials Chemistry, Korea University) ;
  • Lee, Jong-Soon (Department of Advanced Materials Chemistry, Korea University) ;
  • Lee, In-Churl (Department of Advanced Materials Chemistry, Korea University) ;
  • Song, Moon-Bong (Department of Advanced Materials Chemistry, Korea University) ;
  • Lee, Chi-Woo-J. (Department of Advanced Materials Chemistry, Korea University)
  • Published : 2005.11.20
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References

  1. See for example, Ultran Clean Processing of Silicon Surfaces VII; Mertens, P.; Meuris, M.; Heyns, M., Eds.; Solid State Phen.: 2005; Vol. 103
  2. Sawada, Y.; Tsujino, K.; Matsumura, M. Abstracts of the 208th ECS Meeting; 2005, 2005-2, 156
  3. Higashi, G. S.; Chabal, Y. J.; Trucks, G. W.; Raghavachari, K. Appl. Phys. Lett. 1990, 56, 656 https://doi.org/10.1063/1.102728
  4. Watanabe, S.; Nakamura, N.; Ito, T. Appl. Phys. Lett. 1991, 59, 1458 https://doi.org/10.1063/1.105287
  5. Lee, I.-C.; Bae, S.-E.; Song, M.-B.; Lee, J.-S.; Paek, S.-H.; Lee, C.-W. J. Bull. Korean Chem. Soc. 2004, 25, 167 https://doi.org/10.5012/bkcs.2004.25.2.167
  6. Ye, S.; Ishihara, T.; Uosaki, K. J. Electrochem. Soc. 2001, 148, C421 https://doi.org/10.1149/1.1370964
  7. Wade, C. P.; Chidsey, C. E. D. Appl. Phys. Lett. 1997, 71, 1697 https://doi.org/10.1063/1.120007
  8. Fukidome, H.; Matsumura, M. Appl. Surf. Sci. 1998, 130, 146 https://doi.org/10.1016/S0169-4332(98)00041-5
  9. Homma, T.; Wade, C. P.; Chidsey, C. E. D. J. Phys. Chem. 1998, B102, 7919
  10. Homma, T.; Tsukano, J.; Osaka, T. Electrochem. Soc. Proc. 1999, 99-34, 95
  11. Allongue, P.; de Villeneuve, C. H.; Morin, S.; Boukherroub, R.; Wayner, D. D. M. Electrochim. Acta 2000, 45, 4591 https://doi.org/10.1016/S0013-4686(00)00610-1
  12. Chemla, M.; Homma, T.; Bertabna, V.; Erre, R.; Kubo, N.; Osaka, T. J. Electroanal. Chem. 2003, 559, 111 https://doi.org/10.1016/S0022-0728(02)01280-9
  13. Von Piechowski, M.; Nauser, T.; Hoigne, J.; Buhler, R. E. Ber. Bunsen-Ges. Phys. Chem. 1993, 97, 762 https://doi.org/10.1002/bbpc.19930970604
  14. Ravani, J.; Klug-Roth, D.; Lilie, J. J. Phys. Chem. 1973, 77, 1169 https://doi.org/10.1021/j100628a018

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  2. All-(111) surface silicon nanowire field effect transistor devices: Effects of surface preparations vol.27, pp.None, 2014, https://doi.org/10.1016/j.mssp.2014.08.018