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Electrochemical Formation and Characterization of III-V Compound Semiconductor InSb Nanowires

III-V족 화합물 반도체 InSb 나노와이어의 전기화학적 합성 및 특성 평가

  • 이관희 (한국과학기술연구원 재료연구부) ;
  • 이종욱 (한국과학기술연구원 재료연구부) ;
  • 박호동 (한국과학기술연구원 재료연구부) ;
  • 정원용 (한국과학기술연구원 재료연구부) ;
  • 이종엽 (㈜우리정도)
  • Published : 2005.08.01

Abstract

To the best knowledge, the formation and characterization of InSb nanowires have not been reported yet in spite of its good characteristics as a III-V compound semiconductor. The nanowire arrays were potentiostatically electrodeposited in a mixing solution of indium chloride, antimony chloride, citric acid, and potassium citrate according to our previous work on the electrodeposition of the stoichiometric InSb films. The electrical properties of nanowire arrays were measured by semiconductor parameter analyzer, and the microstructural analysis of the nanowires was conducted by employing XRD. Our experimental results indicate that the InSb nanowires have a highly preferred orientation of (220) direction and also exhibit electrical characteristics of n-type semiconductors which we, however, similar to semi-metals mainly due to their narrow band-gap and high electron mobility.

본 연구에서는 그동안 전기화학적으로 합성되지 못했던 III-V족 화합물 반도체 InSb를 구연산 용액으로부터 합성하였으며 자체 제조한 AAO를 나노템플릿으로 이용하여 정전압 도금을 실시하여 InSb 나노와이어를 제조하였다 제조된 InSb나노와이어는 X선 회절분석 결과 단결정의 나노와이어는 아니었으나 정확하게 화학양론을 만족시키는 화합물임을 확인하였고, 평판 박막 상태의 InSb와는 달리 나노와이어의 길이방향으로 (220) 방향의 결정이 주로 성장하는 우선결정방위를 가지고 있음을 알 수 있었다. 또한 집합적으로 배열된 상태에서 측정된 I-V특성 곡선에서는 n형 반도체의 특성을 보이되 밴드갭이 좁고, 전자이동도가 큰 InSb고유의 특성상 반금속과 유사한 전기적 특성을 보유하고 있음을 확인하였다.

Keywords

References

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