Transactions on Electrical and Electronic Materials

  • 제6권2호
  • /
  • Pages.46-50
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  • 2005
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Dry Etching of BST using Inductively Coupled Plasma

  • Kim, Gwan-Ha (School of Electrical and Electronics Engineering, Chung-ang University) ;
  • Kim, Kyoung-Tae (School of Electrical and Electronics Engineering, Chung-ang University) ;
  • Kim, Dong-Pyo (School of Electrical and Electronics Engineering, Chung-ang University) ;
  • Kim, Chang-Il (School of Electrical and Electronics Engineering, Chung-ang University)
  • 발행 : 2005.04.01
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초록

BST thin films were etched with inductively coupled CF$_{4}$/(Cl$_{2}$+Ar) plasmas. The etch characteristics of BST thin films as a function of CF$_{4}$/(Cl$_{2}$+Ar) gas mixtures were analyzed using optical emission spectroscopy (OES) and Langmuir probe. The BST films in CF$_{4}$/Cl$_{2}$/Ar plasma is mainly etched by the formation of metal chlorides which depends on the emission intensity of the atomic Cl and the bombarding ion energy. The maximum etch rate of the BST thin films was 53.6 nm/min because small addition of CF$_{4}$ to the Cl$_{2}$/Ar mixture increased chemical and physical effect. A more fast etch rate of BST films can be obtained by increasing the DC bias and the RF power, and lowering the working pressure.

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참고문헌

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