Study of the characteristic of $ZnS_{0.24}Se_{0.76}/GaAs$ heterostructure by photoreflectance

$ZnS_{0.24}Se_{0.76}$의 photoreflectance 특성 연구

  • Yu J. I. (Department of Physics, Yeungnam University) ;
  • Kim D. L. (Department of Physics, Yeungnam University) ;
  • Lee J. H. (Korea Institute of Machinery & Materials Laser Application Group)
  • 유재인 (영남대학교 물리학과) ;
  • 김동렬 (영남대학교 물리학과) ;
  • 이제훈 (한국기계연구원 레이저응용시스템그룹)
  • Published : 2004.12.01

Abstract

In this research, we investigated the characteristic of $ZnS_{0.24}Se_{0.76}/GaAs$ heterostructure by using photoreflectance sprctroscopy(PR). The oscillations observed above the 1.43 eV range were attributed Franze-Keldysh effect. The interface electric filed of $GaAs/ZnS_{0.24}Se_{0.76}\;is\;2.153{\times}104\;V/cm$.

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