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Dopant-Activation and Damage-Recovery of Ion-Shower-Doped Poly-Si through $PH_3/H_2$ after Furnace Annealing

  • Kim, Dong-Min (Department of Materials Secience and Engineering, Hongik University) ;
  • Kim, Dae-Sup (Department of Materials Secience and Engineering, Hongik University) ;
  • Ro, Jae-Sang (Department of Materials Secience and Engineering, Hongik University) ;
  • Choi, Kyu-Hwan (Samsung SDl CO.,LTD.) ;
  • Lee, Ki-Yong (Samsung SDl CO.,LTD.)
  • Published : 2004.03.24
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Abstract

Ion shower doping with a main ion source of $P_2H_x$ using a source gas mixture of $PH_3/H_2$ was conducted on excimer-laser- annealed (ELA) poly-Si. The crystallinity of the as-implanted samples was measured using a UV-transmittance. The measured value of as-implanted damage was found to correlate well with the one calculated through/obtained from TRIM-code simulation. The sheet resistance was found to decrease as the acceleration voltage increased from 1 kV to 15 kV at a doping time of 1 min. However, it increases as the acceleration voltage increases under severe doping conditions. Uncured damage after furnace annealing is responsible for the rise in sheet resistance.

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References

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