A Study on the Partial Discharge Pattern Recognition by Use of SOM Algorithm

SOM 알고리즘을 이용한 부분방전 패턴인식에 대한 연구

  • Published : 2004.10.01

Abstract

In this study, we tried to investigate that the advantages of SOM(Self Organizing Map) algorithm such as data accumulation ability and the degradation trend trace ability would be adaptable to the analysis of partial discharge pattern recognition. For the purpose, we analyzed partial discharge data obtained from the typical artificial defects in GIS and XLPE power cable system through SOM algorithm. As a result, partial discharge pattern recognition could be well carried out with an acceptable error by use of Kohonen map in SOM algorithm. Also, it was clarified that the additional data could be accumulated during the operation of the algorithm. Especially, we found out that the data accumulation ability of Kohonen map could make it possible to suggest new patterns, which is impossible through the conventional BP(Back Propagation) algorithm. In addition, it is confirmed that the degradation trend could be easily traced in accordance with the degradation process. Therefore, it is expected to improve on-site applicability and to trace real-time degradation trends using SOM algorithm in the partial discharge pattern recognition

Keywords

References

  1. Cigre Working Group 21.03 Recognition of Discharges, Electra, Vol. 11, pp. 61-98, 1969
  2. E. Gulski, A. Krivda, 'Neural Network as a Tool for Recognition of Partial Discharges', IEEE Trans. on Elect. Insul., Vol. 28 No. 6, pp. 984-1001, 1993 https://doi.org/10.1109/14.249372
  3. T. Kohonen, 'The self-organizing map', Proc. of the IEEE, vol. 78, no. 9, pp. 1464-1480, 1990 https://doi.org/10.1109/5.58325
  4. MIT Gmbh, DataEngine Overview and User Manual, 1999
  5. Jeon-Seon Lee and Ja-Yoon Koo, 'An Analysis of the Partial Discharge Pattern Related to the Artificial Defects Introduced at the Interface in an XLPE Cable Joint using a Laboratory Model', KIEE International Transactions on Electrophysics and Applications, Vol. 2-C, No. 5, pp. 239-245, 2002 https://doi.org/10.1109/CEIDP.2002.1048839