References
- C. I, Kim et al, Bulletin of the Korea Institute of Eletrical and Electronic Material Engineering, Vol. 13, No.4, pp, 33-38, 2000
-
Kaoru Miura et al, 'The effect of Bi ions substituting at the Sr site in Sr
$Bi_2Ta_2O_9$ ', lpn, J. Appl. Phys. Vol. 37, 1998 -
Shin-ichi et al, 'Effects of annealing in Ar gas on ferroelectric properties of Sr
$Bi_2Ta_2O_9$ thin film', Jpn, J. Appl. Phys., Vol. 37, 1998 -
S. Y. Chen et aI, 'Aging behavior and recovery of polarization in
$Sr_0.8Bi_2.4Ta_2O_9$ thin films', 1. Appl. Phys, Vol. 87, No.6, pp. 3050-3055, 2000 https://doi.org/10.1063/1.372298 -
Kazumi Kato, 'Low Temperature Synthesis of
$SrBi_2Ta_O_9$ Ferroelectric Thin Films through the Complex Alkoxide Method:Effects of Functional Group, Hydrolysis and Water Vapor Treatment', Jpn. J. Appl. Phys. Vol. 37, Pt.1, No. 9B, pp. 5178, 1998 https://doi.org/10.1143/JJAP.37.5178 -
Kazunari Maki, Nobuyuki Soyarna, Satoru Mori and Katsumi Ogi, 'Evaluationof Pb(Zr,Ti)
$O_3$ Films Derived from Propylene Glycol Based Sol Gel Solutions', Jpn. J. Appl. Phys. Vol. 39, Pt. 1, No. 9B, pp. 5421-5425, 2000 https://doi.org/10.1143/JJAP.39.5421 -
Nobuyuki Soyama, Kazunari Maki, Satoru Mori and Katsumi Ogi, 'Preparation and Evaluation of Pb(Zr,Ti)
$O_3$ Thin Films for Low Voltage Operation', Jpn. J. Appl. Phys. Vol. 39, Pt. 1, No. 9B, pp. 5434-5436, 2000 https://doi.org/10.1143/JJAP.39.5434 - C.I.Cheon et aI, 'Electrical Properties of SBT Ferroelectric Thin Films Prepared by MOD', lownal of the Korean Institute of Electrical and Electronic Material Engineers. Vol. 12, No.2, pp. 151, 1999
-
M. A. Rodrinues et al, 'Phase formation and characterization of the Sr
$Bi_2Ta_2O_9$ layered perovskite ferroeelctric", Intergrated Ferroelectric, Vol. 14, pp. 201, 1997 https://doi.org/10.1080/10584589708019993 -
M. A. Rodrinues et al, 'Phase formation and characterization of the Sr
$Bi_2Ta_2O_9$ layered-perovskite ferroeelctric', Intergrated Ferroelectric, Vol. 14, pp. 201, 1997 https://doi.org/10.1080/10584589708019993