Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Scintillating properties of Bi-doped $Y_3Ga_5O_{12}$

  • Novoselov, Andrey (Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Japan Science and Technology Agency) ;
  • Yoshikawa, Akira (Institute of Multidisciplinary Research for Advanced Materials, Tohoku University) ;
  • Nikl, Martin (Institute of Physics AS CR) ;
  • Fukuda, Tsuguo (Institute of Multidisciplinary Research for Advanced Materials, Tohoku University)
  • Published : 2004.12.01
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Abstract

Shaped single crystals of Bi : $Y_3Ga_5O_{12}$(Bi = 0.041, 0.047 and 0.061 mol%) were grown by the micro-pulling-down method. Optical absorption spectra show an absorption band at 288 nm ascribed to the lowest energy $6s^2$ \longrightarrow 6s6p transition of $Bi^{3+}$ , while luminescence spectra demonstrate the band at 314 nm ascribed to the reverse radiative transition of the excited $Bi^{3+}$ centres. At room temperature, dominant decay time component was found to be about 440 ns with a minor slower component 580 ns.

Keywords

References

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