전력전자학회지 (KIPE Magazine)

전력전자학회 (The Korean Institute of Power Electronics)
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스마트 파워 IC용 LIGBT의 기술과 동향

  • 발행 : 2004.12.01
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초록

키워드

참고문헌

  1. Baligar. B. J .. Power Semiconductor Devices (PWS. 1996). p. 452
  2. B. H. Lee. C. M. Yun, D. S. Byeon. M. K. Han and Y. I. Choi, 'A trench-gate silicon-on-insulator lateral insulated gate bipolar transistor with the $p^+$ cathode weL'1. in Jpn. J. Appl. Phys. 3, pp. 854-859. 1994
  3. T. P. Chow. 'A reverse-channel. high voltage lateral IGBT' . in Proc. ISPSD, pp. 57 61. 1994
  4. N. Thapar and B. J. Baliga, 'An experimental evaluation of the on-state performance of trench IGBT designs'. in Solid State Electronics. Vol. 42. No.5. pp. 771-776. 1998
  5. Jun Cai. K. O. Sin Johnny. K. T. Mok Philip. 'A new lateral trench-gate conductivity modulated power transistor'. in IEEE Trans., Electron Devices. Vol. 46. No.8. pp. 1778- 1793. 1999
  6. I. Y. Park and Y. I. Choi, 'Trench cathode TIGBT with improved latch-up characteristics'. in Physica Scripta. Vol. T79. pp. 337-340. 1999
  7. T. Trajkovic, F. Udrea. G. A J. Amaratunga. W. I. Milne. S. S. M. Chan. P. R. Waind. J. Thomson and D. E. Crees. 'Silicon MOS controlled bipolar power switching devices using trench technology'. in Int. J. Electronics. Vol. 86. No. 10. pp. 1153-1168.1999
  8. F. Udrea and G. Amaratunga. 'The trench insulated gate bipolar transistor a high power switching device'. in Proc. 20th Int. Conference on Microelectronics. pp. 369-374. 1995
  9. O. Spulber. E. M. S. Narayanan. S. Hardikar, M. M. De Souza. M. Sweet. and Subhas Chandra Bose J. V.. 'A Novel Gate Geometry for the IGBT: The Trench Planner Insulated Gate Bipolar Transistor'. in IEEE Electron Device Letters. Vol. 20. No. 11, pp. 580-582. 1999
  10. F. Udrea. S. S. M. Chan. J. Thomson. T. Trajkovic. P. R. Waind. G. A J. Amaratunga. and D. E. Crees. '1.2kV trench insulated gate bipolar transistors with ultra low on-resistance' . in IEEE Electron Device Letters. Vol. 20. No.8. pp. 428-430. 1999
  11. B. J. Baliga. 'Trench-IGBTs with integrated diverter structures'. in Proc. ISPSD. pp. 201-206. 1995
  12. K. Sheng. S. J. Finney and B. W. Williams. 'Improved understanding of IGBT forward conduction'. in Proc.. IPEMC. pp. 48-55. 1997