White Light Emitting Diode with the Parallel Integration of InGaN-based Multi-quantum Well Structures

InGaN계 다중양자우물구조를 병렬 집적화한 백색광소자의 특성 연구

The parallel multi-quantum well structures of blue and amber lights were designed and grown in metal-organic chemical vapor deposition by utilizing integration process on epitaxial layers. Samples were deposited for 5 periods-InGaN multi-quantum well layers for blue light emission and partially etched in order to regrow the 3 periods-InGaN multi-quantum wells for amber light. The blue and amber photoluminescence spectra were observed at the peak wavelengths of 475 and 580 nm, respectively. The chromatic coordinates of the white emitting diode were 0.31 and 0.34.