반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)
- 제3권1호
- /
- Pages.35-39
- /
- 2004
- /
- 1738-2270(pISSN)
Effect of Alternating Magnetic Field on Ion Activation in Low Temperature Polycrystalline Silicon Technology
- Hwang, Jin Ha (Dept. of Mat. Sci. & Eng., College of Engineering, Hongik University) ;
- Lim, Tae Hyung (Dept. of Mat. Sci. & Eng., College of Engineering, Hongik University)
- 발행 : 2004.03.01
초록
Statistical design of experiments was successfully employed to investigate the effect of alternating magnetic field on activation of polycrystalline Si (p-Si) doped as n-type using
키워드