Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Design and Fabrication of 100 GHz MIMIC Amplifier Using Metamorphic HEMT

Metamorphic HEMT를 이용한 100GHz MIMIC 증폭기의 설계 및 제작

  • 안단 (동국대학교 밀리미터과 신기술 연구센터) ;
  • 이복형 (동국대학교 밀리미터과 신기술 연구센터) ;
  • 임병옥 (동국대학교 밀리미터과 신기술 연구센터) ;
  • 이문교 (동국대학교 밀리미터과 신기술 연구센터) ;
  • 백용현 (동국대학교 밀리미터과 신기술 연구센터) ;
  • 채연식 (동국대학교 밀리미터과 신기술 연구센터) ;
  • 박형무 (동국대학교 밀리미터과 신기술 연구센터) ;
  • 이진구 (동국대학교 밀리미터과 신기술 연구센터)
  • Published : 2004.09.01
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Abstract

In this Paper, the 0.1 w InGaAs/InAlAs/GaAs Metamorphic HEMT, which is applicable to MIMIC, and a 100 GHz MIMIC amplifier were designed and fabricated. The DC characteristics of MHEMT are 640 mA/mm of drain current density, 653 mS/mm of maximum transconductance. The current gain cut-off frequency(fT) is 173 GHz and the maximum oscillation frequency(fmax) is 271 GHz. A 100 GHz amplifier was designed using 0.1${\mu}{\textrm}{m}$ MHEMT and CPW technology. The measured results from the 100 GHz MIMIC amplifiers show good S21 gain of 10.1 dB and 12.74 dB at 100 GHz and 97.8 GHz, respectively.

본 논문에서는 0.1㎛ InGaAs/InAlAs/GaAs Metamorphic HEMT (High Electron Mobility Transistor)를 이용하여 100 GHz 대역의 MIMIC(Millimeter-wave Monolithic Integrated Circuit) 증폭기를 설계 및 제작하였다. MIMIC 증폭기의 제작을 위해 Metamorphic HEMT(MHEMT)를 설계 및 제작하였으며, 제작된 MHEMT의 드레인 전류 밀도는 640 mA/mm 최대 전달컨덕턴스(Gm)는 653 mS/mm를 얻었으며, RF 특성으로 fT는 173 GHz, fmax는 271 GHz의 양호한 성능을 나타내었다. 100 GHz MIMIC 증폭기의 개발을 위해 MHEMT의 소신호 모델과 CPW 라이브러리를 구축하였으며, 이를 이용하여 MIMIC 증폭기를 설계하였다. 설계된 증폭기는 본 연구에서 개발된 MHEMT MIMIC 공정을 이용해 제작되었으며, 100 GHz MIMIC 증폭기의 측정결과, 100 GHz에서 10.1 dB 및 97.8 Gllz에서 12.74 dB의 양호한 S21 이득 특성을 나타내었다.

Keywords

References

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