Transactions on Electrical and Electronic Materials

  • 제5권4호
  • /
  • Pages.138-142
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  • 2004
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Wafer Burn-in Method of SRAM for Multi Chip Package

  • Kim, Hoo-Sung (Memory Division, Samsung Electronics Co., Ltd.) ;
  • Kim, Je-Yoon (Department of Electrical Engineering, Korea University) ;
  • Sung, Man-Young (Department of Electrical Engineering, Korea University)
  • 발행 : 2004.08.01
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초록

This paper presents the improved bum-in method for the reliability of SRAM in Multi Chip Package (MCP). Semiconductor reliability is commonly improved through the bum-in process. Reliability problem is more significant in MCP that includes over two chips in a package, because the failure of one chip (SRAM) has a large influence on the yield and quality of the other chips - Flash Memory, DRAM, etc. Therefore, the quality of SRAM must be guaranteed. To improve the quality of SRAM, we applied the improved wafer level bum-in process using multi cells selection method in addition to the previously used methods. That method is effective in detecting special failure. Finally, with the composition of some kind of methods, we could achieve the high quality of SRAM in Multi Chip Package.

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참고문헌

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