Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Tailoring the Static Characteristics of Implanted VCSELs with the Implant and Metal Aperture Radii

임플랜트 및 금속전극 반경에 따른 임플랜트 VCSEL 정특성의 변화

  • Published : 2004.07.01
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Abstract

We have formulated an empirical analytic model for the static characteristics of implanted vertical-cavity surface-emitting lasers (VCSELs). Specifically, we have derived analytic formulas for the threshold current, slope efficiency, dynamic resistance, and the output power and forward voltage at the operation current of 12 ㎃ in terms of the implant and metal-aperture radii by fitting the measured results. The radii of the metal aperture and implant mask of the 850 nm VCSELs range from 4 to 12.5 ${\mu}{\textrm}{m}$ and 7 to 17.5 ${\mu}{\textrm}{m}$ respectively. The model shows the way of tailoring the VCSEL characteristics by changing the mask dimensions only.

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References

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