Removal of Static Electricity on Polyimide Film Surface by $O_2$ or Ar Cold Plasma Etching

  • Lee, Jae-Ho (Department of Textile Engineering, Miryang National University) ;
  • Jeong, Hee-Cheon (School of Textiles, Yeungnam University)
  • Published : 2004.06.01

Abstract

Cold plasma of $O_2$ or Ar was irradiated on hydrophobic Kapton surface to attenuate or remove the electrostatic potential. A measurement on charge dissipation speed clarifies the obscure effect of plasma. These consequences reveal that $O_2$ plasma etching is more effective than Ar plasma. After 30 days, the dissipation speed of accumulated charge on initially etched sample has not changed under summer season.

Keywords

References

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