Transactions on Electrical and Electronic Materials

  • 제5권3호
  • /
  • Pages.93-97
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  • 2004
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Structural and Optoelectronic Properties of SnO2 Nanowires

  • Lee, Jong-Soo (Department of Electrical Engineering, Korea University) ;
  • Sim, Sung-Kyu (Department of Electrical Engineering, Korea University) ;
  • Min, Byung-Don (Department of Electrical Engineering, Korea University) ;
  • Cho, Kyoung-Ah (Department of Electrical Engineering, Korea University) ;
  • Kim, Sang-Sig (Department of Electrical Engineering, Korea University)
  • 발행 : 2004.06.01
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초록

Structural and optoelectronic properties of as-synthesized SnO$_2$ nanowires were examined in this study. The SnO$_2$ nanowires were first synthesized by thermal evaporation of ball-milled SnO$_2$ powders in argon atmosphere without the presence of any catalysts, arid their structural properties are then investigated by X-ray diffraction, Raman scattering, scanning electron microscopy, and transmission electron microscopy. This investigation revealed that the synthesized SnO$_2$ nanowires are single-crystalline and that their growth direction is parallel to the [100] direction. In addition, photoresponse of a single SnO$_2$ nanowire was performed with light with above-gap energy, and different characteristics of photoresponses were obtained for the nanowire at ambient atmosphere and in vacuum. The photoresponse mechanism is briefly discussed in this paper.

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피인용 문헌

  1. Structure and properties of transparent conductive Sb2O5-doped SnO2 thin films fabricated by using pulsed laser deposition vol.60, pp.10, 2012, https://doi.org/10.3938/jkps.60.1543