References
- J. Phys. D v.32 Electromigration in integrated circuit conductors J.R.Lloyd https://doi.org/10.1088/0022-3727/32/17/201
- J. Appl. Phys. v.86 A physically based model of electromigration and stress-induced void formation in microelectronic interconnects R.J.Gleixner;W.D.Nix https://doi.org/10.1063/1.370990
- Appl. Phys. Lett. v.59 Activation energy for electromigration in Cu films C.W.Park;R.W.Vook https://doi.org/10.1063/1.106011
- Tech. Dig. Int. Electron Dev. Metting Evaluation of electromigration and stressmigration reliabilities of copper interconnects by a simple pulsed-current stressing technique H.Yamada;T.Hosji;T.Takewaki;T.Shibata;T.Ohmi;T.Nittam
- Tech. Dig. Int. Electron Dev. Meeting Large-electromigration-resistance coper interconnect technology for sub-halfmicron ULSI's T.Ohmi;T.Hoshi;T.Yoshie;T.Takewaki;M.Otsuki;T.Shibata;T.Nitta
- Appl. Phys. Lett v.61 Fatal electromigration voids in narrow aluminum-copper interconnect J.H.Rose https://doi.org/10.1063/1.108284
- J. Appl. Phys. v.72 Slit morphology of electromigration induced open circuit failures in fime line conductors J.E. Sanchez, Jr.;L.T.McKnelly;J.W. Morris, Jr. https://doi.org/10.1063/1.351484
- J. Appl. Phys. v.76 Electromigration failure by shape change of voids in bamboo lines E.Arzt;O.Kraft;W.D.Nix;J.E. Sanchez, Jr https://doi.org/10.1063/1.357734
- J. Appl. Phys. v.81 Electromigration-induced transgranular failure mechanisms in single-crystal aluminum interconnects Y.C.Joo;C.V.Thompson https://doi.org/10.1063/1.364454
- Appl. Phys. Lett. v.64 Electromigration instability: transgranular slits in interconnects Z.Suo;W.Wang;M.Yang https://doi.org/10.1063/1.111750
- J. Appl. Phys. v.85 Influence of anisotropic surface diffusivity on electromigration induced void migration and evolution D.R.Fridline;A.F.Bower https://doi.org/10.1063/1.369656
- J. Appl. Phys. v.85 Theoretical analysis of electromigration-induced failure of metallic thin films due to transgranular void propagation M.R.Gungor;D.Maroudas https://doi.org/10.1063/1.369532
- J. Appl. Phys. v.85 Influence of anisotropic surface diffusivity on electromigration induced void migration and evolution D.R.fridline;A.F.Bower https://doi.org/10.1063/1.369656
- J. Appl. Phys. v.90 Computer simulation of void growth dynamics under the action of electromigration and capillary forces in narrow thin interconnets T.O.Ogurtani;E.E.Oren https://doi.org/10.1063/1.1382835
- J. Phys.D v.31 Effect of microstructure on electromigration kinetics in Cu Lines A.Gladkikh;M.Karpovski;A.Palevski;Y.S.Kaganovskii https://doi.org/10.1088/0022-3727/31/14/003
- J. Electron. Mater. v.31 Mechanism of electromigration failure in submicron Cu interconnects N.L.Michael;C.U.Kim;Q.T.Jiang;R.A.Augur;P.Gillespie https://doi.org/10.1007/s11664-002-0035-5
- Microelectron. Reliab. v.40 Surface electromigration in copper interconnects N.D.McCusker;H.S.Gamble;B.M.Amstrong https://doi.org/10.1016/S0026-2714(99)00091-8
- IEEE Trans. Reilab. v.51 Electromigration reliability issues in dual-damascence Cu interconnections E.T.Ogawa;K.D.Lee;V.A.Blaschke;P.S.Ho https://doi.org/10.1109/TR.2002.804737
- Appl. Phys. Lett. v.78 Mechanisms for very long electromigration lifetime in dual-damascence Cu interconnections C.K.Hu;L.Gignac;S.G.Malhotra;R.Rosenberg;S.Boettcher https://doi.org/10.1063/1.1347400
- Microelectron. Engineering v.70 Reduced Cu interface diffusion by CoWP surface coating C.K.Hu;L.gignac;R.Rosenberg;E.Liniger;J.Rubino;C.Sambucetti;A.Stamper;A.Domenicucci;X.Chen https://doi.org/10.1016/S0167-9317(03)00286-7
- J. Appl. Phys. v.36 Morphological changes of a surface of revolution due to capillarityinduced surface diffusion F.A.Nichols;W.W.Mullins https://doi.org/10.1063/1.1714360
- J. Appl. Phys. v.77 Nonlinear stability analysis of the diffusional spheroidization of rods J.H.Choy;S.A.Hackney;J.K.Lee https://doi.org/10.1063/1.359207
- J. Appl. Phys. v.87 Electromigration-driven shape evolution of two-dimensional voids M.Schimschak;J.Krug https://doi.org/10.1063/1.371928