References
- H. Zhong, S. N. Hong, Y. S. Suh, H. Lazar, G. Heuss and V. Misra, 'Propertied of Ru-Ta alloys as gate electrodes for NMOS and PMOS silic on devices', IEDM 01, p. 467, 2001 https://doi.org/10.1109/IEDM.2001.979543
-
H. Iwai, S. I. Ohmi, 'Problems and solutions for downsizing CMOS below
$0.1{\mu}m$ ', ICE2000 Proc., p. 1, 2000 https://doi.org/10.1109/SMELEC.2000.932298 - J. R. Hauser et al, 'SRC working paper', 1997
- C. H. Choi, P. R. Chidambaram, R. Khamankar, C. F. Machala, Z. Yu, R. W. Dutton, 'Dopant profile and gate geometric effects on polysilicon gate depletion in scaled MOS', IEEE Trans. on Electron Dev., vol. 49, no. 7, p. 1227, 2002 https://doi.org/10.1109/TED.2002.1013280
- V. Misra, G. P. Heuss, and H. Zhong 'Use of metal -oxide-semiconductor capacitors to detect interactions of Hf and Zr gate electrodes with SiO₂and ZrO2', Appl. Phys. Lett., vol. 78, no. 26, p. 4166, 2001 https://doi.org/10.1063/1.1380240
- R. Lin, Q. Lu, P. Ranade, T. J. King, and C. Hu, 'An adjustable work function technology using Mo gate for CMOS devies', IEEE Electron Device Lett., vol. 23, no. 1, p. 49, 2002 https://doi.org/10.1109/55.974809
- Q. Lu, Y. C. Yeo, P. Ranade, H. Takeuchi, R. J. King, and C. Hu, 'Dual-metal gate technology for deep-submicron CMOS transistors', Symposium on VLSI Technology Digest of Technical Paper, p. 72, 2000 https://doi.org/10.1109/VLSIT.2000.852774
- Y. S. Suh, G. Heuss, H. Zhong, S. N. Hong, and V. Misra, 'Electrical characteristics of TaSixNy gate electrodes', Symposium on VLSI Technology Digest of Technical Paper, p. 47, 2001 https://doi.org/10.1109/VLSIT.2001.934940
- M. A. Pawlak, T. Schram, K. Maex, A. Vantomme, 'Investigation of Iridium as a gate electrode for deep sub-micron CMOS technology', pbulished by Elsevier B.V. 2003
-
T. Ushiki,K. Kawai, I. Ohshima and T. Ohmi, 'Chemical reaction concerns of gate metal with gate dielectric in Ta gate MOS device: An effect of self-sealing barrier configuration interposed between Ta and
$Sio_2$ ', IEEE Trans. on Electron Dev., vol. 47, no. 11, p. 2201 https://doi.org/10.1109/16.877184 - Q. Lu, R. Lin, P. Ranade, T. J. King, C. Hu, 'Metal gate work function adjustment for future CMOS technology', Symposium on VLSI Technology Digest of Technical Paper, p. 45, 2001 https://doi.org/10.1109/VLSIT.2001.934939
- R. Beyers, 'Thermodynamic considerations in refractory metal-silicon-oxygen systems', J. Appl. Phys. vol. 56, no. 1, p. 147, 1984 https://doi.org/10.1063/1.333738
- I. Brain, 'Thermochemical data of pure substances', John Wiley and Sons, p. 1440, 1994
- D. R. Gaskell, 'Introduction to metallurgical thermodynamics', McGraw-Hill, p. 226, 1998
- H. Zhong, G. Heuss, and V. Misra, 'Characterization of RuO2 electrode on Zr silicate and ZrO2 dielectrics', Applied Physics Letters, vol. 78, no. 8, p. 1134, 2001 https://doi.org/10.1063/1.1347402
- J. E. Suarez, B. E. Johnson, and B. El-Karch, 'Thermal stability of polysilicon resistors, IEEE, p. 537, 1991 https://doi.org/10.1109/ECTC.1991.163929
- T. S. Kalkur, Y. C. Lu, 'Thermal properties of ruthenium dioxide films', Thin Solid Films, vol. 205, p. 266, 1991