DOI QR코드

DOI QR Code

HBT의 전류원 모델을 위한 최적 열 저항값 추출 방법

Optimal Thermal Resistance Extraction Method for the Current Source Model of HBT

  • 발행 : 2004.04.01

초록

Two new extraction methods for the thermal Resistance of HBT(Heterojunction Bipolar Transistors) are proposed. First, the analytical expression, based on the thermal characteristics that the base to emitter junction voltage drops with the increase of junction temperature, is derived. Second, the thermal resistance equation that can predict the measured DC(Direct Current) data optimally is derived. These optimal thermal resistance expression is applied to the 2 finger 2${\times}$20${\mu}{\textrm}{m}$-AlGaAs/GaAs HBT and shows the good agreement with the measured data.

키워드

참고문헌

  1. Electrical and thermal characterization of MESFETs, HEMTs, and HBTs R,Anholt
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  3. IEEE Trans. on Electron Devices v.39 no.10 CW meastlrement of HBT thermal resistance D.E.Dawson;A.K.Gupta https://doi.org/10.1109/16.158793
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