Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Optimal Thermal Resistance Extraction Method for the Current Source Model of HBT

HBT의 전류원 모델을 위한 최적 열 저항값 추출 방법

  • Published : 2004.04.01
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Abstract

Two new extraction methods for the thermal Resistance of HBT(Heterojunction Bipolar Transistors) are proposed. First, the analytical expression, based on the thermal characteristics that the base to emitter junction voltage drops with the increase of junction temperature, is derived. Second, the thermal resistance equation that can predict the measured DC(Direct Current) data optimally is derived. These optimal thermal resistance expression is applied to the 2 finger 2${\times}$20${\mu}{\textrm}{m}$-AlGaAs/GaAs HBT and shows the good agreement with the measured data.

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References

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