Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Deposition and Electrical Properties of Silicon Nitride Thin Film MIM Capacitors for MMIC Applications

MMIC에 적용되는 MIM 커패시터의 실리콘 질화막 증착과 전기적 특성

  • 성호근 (원광대학교 전기전자 및 정보공학부) ;
  • 소순진 ((주)나리지온) ;
  • 박춘배 (원광대학교 전기전자 및 정보공학부)
  • Published : 2004.03.01
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Abstract

We have fabricated MIM capacitors for MMIC applications, with capacitances as high as 600pF/$\textrm{mm}^2$ and excellent electrical properties of the insulator layer. Silicon nitride thin film is the desirable material for MMIC capacitor fabrication. Standard MIM capacitance in MMIC is 300pF/$\textrm{mm}^2$ with an insulator layer thickness of more than 2000$\AA$. However, capacitors with thin insulator layers have breakdown voltages as low as 20V. We have deposited insulator layers by PECVD in our MIM structure with an air bridge between the top metal and the contact pad. The PECVD process was optimized for fabricating the desired capacitors to be used in MMIC. Silicon nitride(Si$_{x}$N$_{y}$) thin films of about 1000$\AA$ thick show capacitances of about 600pF/$\textrm{mm}^2$, and breakdown voltages above 70V at 100nA.A.A.

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References

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