한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제17권2호
  • /
  • Pages.212-216
  • /
  • 2004
  • /
  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지
DOI QR코드

DOI QR Code

집적화된 3 극형 탄소 나노 튜브 전자 방출원의 제작

Fabrication of Integrated Triode-type CNT Field Emitters

  • 이정아 (한국과학기술연구원 마이크로시스템 연구센터) ;
  • 문승일 (한국과학기술연구원 마이크로시스템 연구센터) ;
  • 이윤희 (고려대학교 물리학과) ;
  • 주병권 (한국과학기술연구원 마이크로시스템 연구센터)
  • 발행 : 2004.02.01
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

In this paper, we have fabricated a triode field emitter using carbon nanotubes (CNTs) directly grown by thermal chemical vapor deposition(CVD) method as an electron omission source. Vertically aligned CNTs have been grown in the center of the gate hole, to the size of 1.5 ${\mu}{\textrm}{m}$ in diameter, with help of a sacrificial layer of a type generally used in metal tip process. By the method of tilling the substrate, we made CNTs emitters both with and without SiO$_2$layer, a sidewall protector, deposited on sidewall of gate. After that we researched the electrical characteristics about two types of emitters. In effect, a sidewall protector can enhance the electrical characteristics by suppressing the problem of short circuits between the gate and the CNTs. The leakage current of an emitter with a sidewall protector is approximately sevenfold lower than that of an emitter without it at a gate voltage of 100 V.

키워드

참고문헌

  1. Nature v.354 Helical microtubules of graphitic carbon S.Iijima https://doi.org/10.1038/354056a0
  2. Nature v.363 Single-shell carbon nanotubes of 1-nm diameter S.Iijima;T.Ichihashi https://doi.org/10.1038/363603a0
  3. Appl. Phys. Lett. v.73 no.15 Electron field emission from phase pure nanotube films grown in a methane/hydrogen plasma O.M.Kuttel;O.Groening;C.Emmenegger;L.Schlapbach https://doi.org/10.1063/1.122395
  4. Electrochem. Soc. Proc. Coll. v.98-8 Field emission from carbon nanotubes:a comparative study Bonard,J.M.;Salvetat,J.P.;Stockli,T.;Forro,L.;Chatelain,A.
  5. IEEE Electron Device Lett. v.22 no.9 Carbon-nanotube-based triode-field-emission displays using gated emitter structure F.Ito;Y.Tomihari;Y.Okada;K.Konuma;A.Okamoto https://doi.org/10.1109/55.944328
  6. Appl. Phys. Lett. v.80 no.21 Carbon nanotube electron emitters with a gated structure using backside exposure processes D.S.Chung;S.H.Park;H.W.Lee;J.H.Choi;S.N.Cha;J.W.Kim;J.E.Jang;K.W.Min;S.H.Cho;M.J.Yoon;J.S.Lee;C.K.Lee;J.H.Yoo;J.M.Kim;J.E.Jung;Y.W.Jin;Y.J.Park;J.B.You https://doi.org/10.1063/1.1480104
  7. Adv. Matter. v.13 no.7 Realization of gated field emitters for electrophotonic applications using carbon for electrophotonic applications using carbon nanotube line emitters directly grown into submicrometer holes Y.H.Lee;Y.T.Jang;D.H.Kim;J.H.Ahn;B.K.Ju https://doi.org/10.1002/1521-4095(200104)13:7<479::AID-ADMA479>3.0.CO;2-H
  8. Nanotechnology v.13 Fabrication and electrical characteristics of carbon nanotube field emission microcathodes with an integrated gate electrode G.Pirio;P.Legagneux;D.Pribat;K.B.K.Teo;M.Chhowalla;G.A.J.Amaratunga;W.I.Milne
  9. Appl. Phys. Lett. v.80 no.16 Microgating carbon nanotube field emitters by in situ growth inside open aperture arrays D.S.Y.Hsu https://doi.org/10.1063/1.1472463
  10. IEEE Electron Device Lett. v.22 no.11 Low selective growth of carbon nanotubes K.J.Chen;W.K.Hong;C.P.Lin;K.H.Chen;L.C.Chen;H.C.Cheng https://doi.org/10.1109/55.962648
  11. Proc. Int. Vacuum Microelectronics Conf. Gated carbon nanotube emitters grown on silicon trench wells with a sidewall spacer for stable vacuum microwave devices S.D.Ahn;Y.H.Song;S.Y.Choi;J.B.Park;J.I.Sohn;S.H.Lee;J.H.Lee;K.I.Cho
  12. Appl. Phys. Lett. v.76 no.17 Field emission of different oriented carbon nanotubes Y.Chen;D.T.Shaw;I.Guo https://doi.org/10.1063/1.126379
  13. Appl. Phys. A v.67 no.1 Field emission from multi-walled carbon nanotubes and its application to electron tubes Y.Saito;K.Hamaguchi;S.Uemura;K.Uchida;Y.Tasaka;F.Ikazaki;M.Yumura;A.Kasuya;Y.Nishina https://doi.org/10.1007/s003390050743
  14. 전기전자재료학회논문지 v.14 no.10 유도결합형 플라즈마 화학기상 증착법을 이용한 탄소나노튜브의 성장 및 전계방출 특성 연구 김광식;류호진;장건익
  15. 전기전자재료학회논문지 v.15 no.7 레이저 증착법에 의한 탄소계 박막의 구조 및 전계 방출 특성 류정탁;Kenjiro Oura;김연보 https://doi.org/10.4313/JKEM.2002.15.7.634
  16. 전기전자재료학회논문지 v.14 no.9 Ni 박막 촉매 Etching 조건에 따른 탄소나노튜브 성장 정성희;장건익;류호진